GaAs MMICs

At RFHIC we offer cost-efficient Gallium Arsenide (GaAs) MMICs designed for 50-ohm and 75-ohm FTTH, Set-Top Box, Telecom, and Smart Meter applications. Our GaAs MMICs are processed on Gallium Arsenide

At RFHIC we offer cost-efficient Gallium Arsenide (GaAs) MMICs designed for 50-ohm and 75-ohm FTTH, Set-Top Box, Telecom, and Smart Meter applications. Our GaAs MMICs are processed on Gallium Arsenide Enhancement Mode pHEMT which ensures minimal noise and low current draw. Users can utilize this device for low noise amplifiers, drivers, gain blocks, and final stage amplifiers. Our GaAs MMICs are designed to be RoHS compliant delivering our customers with high quality and environmentally conscious products.

At RFHIC we offer cost-efficient Gallium Arsenide (GaAs) MMICs designed for 50-ohm and 75-ohm FTTH, Set-Top Box, Telecom, and Smart Meter applications. Our GaAs MMICs are processed on Gallium Arsenide

At RFHIC we offer cost-efficient Gallium Arsenide (GaAs) MMICs designed for 50-ohm and 75-ohm FTTH, Set-Top Box, Telecom, and Smart Meter applications. Our GaAs MMICs are processed on Gallium Arsenide Enhancement Mode pHEMT which ensures minimal noise and low current draw. Users can utilize this device for low noise amplifiers, drivers, gain blocks, and final stage amplifiers. Our GaAs MMICs are designed to be RoHS compliant delivering our customers with high quality and environmentally conscious products.
  • Description

    RFHIC’s AE514 is a costefficient 75 Ohm GaAs EpHEMT MMIC lownoise amplifier designed for CATV and FTTH (GPON, GEPON) applications. Covering from 30 to 2200 MHz, the AE514 provides a ...

    Frequency
    30 ~ 1,000MHz
    Output Power
    0.3W
    Gain
    18dB
    StatusProduction
    Freq. (MHz)30 ~ 1,000
    Gain (dB)18
    RFHIC's AE514 is a costefficient 75 Ohm GaAs EpHEMT MMIC lownoise amplifier designed for CATV and FTTH (GPON, GEPON) applications. Covering from 30 to 2200 MHz, the AE514 provides a high gain of 18 dB with 40 dBm OIP3 and 2.5 dB NF. This device is fabricated on Gallium Arsenide Enhancement Mode (GaAs EpHEMT), providing lower current draw, noise, and higher linearity. Leadfree and RoHS compliant.
  • Description

    RFHIC’s ACQ102 is a costefficient 75 Ohm GaAs EpHEMT MMIC lownoise amplifier designed for CATV and FTTH (GPON, GEPON) applications. Covering from 30 to 1000 MHz, the ACQ102 provides a ...

    Frequency
    30 ~ 1,000MHz
    Output Power
    0.1W
    Gain
    22dB
    StatusProduction
    Freq. (MHz)30 ~ 1,000
    Gain (dB)22
    RFHIC's ACQ102 is a costefficient 75 Ohm GaAs EpHEMT MMIC lownoise amplifier designed for CATV and FTTH (GPON, GEPON) applications. Covering from 30 to 1000 MHz, the ACQ102 provides a high gain of 21.5 dB with 38 dBm OIP3 and 2.5 dB NF. The device is designed on a Gallium Arsenide Enhancement Mode (GaAs EpHEMT) process and is packaged in a 4mm x 4mm, QFN package. Leadfree and RoHS compliant.
  • Description

    RFHIC’s ACQ624 is a costefficient 75 Ohm GaAs EpHEMT MMIC lownoise amplifier designed for optical node, RFoG, and FTTH (GPON, GEPON) applications. Covering from 50 to 870 MHz, the ACQ624 ...

    Frequency
    50 ~ 870MHz
    Output Power
    0.2W
    Gain
    35dB
    StatusProduction
    Freq. (MHz)50 ~ 870
    Gain (dB)35
    RFHIC's ACQ624 is a costefficient 75 Ohm GaAs EpHEMT MMIC lownoise amplifier designed for optical node, RFoG, and FTTH (GPON, GEPON) applications. Covering from 50 to 870 MHz, the ACQ624 provides a high gain of 34.5 dB with 36 dBm OIP3 and 2 dB NF. This device is fabricated on Gallium Arsenide Enhancement Mode (GaAs EpHEMT), providing lower current draw, noise, and higher linearity. Leadfree and RoHS compliant.
  • Description

    RFHIC’s ACQ629 is a costefficient 75 Ohm GaAs EpHEMT MMIC lownoise amplifier designed for CATV and FTTH (GPON, GEPON) applications. Covering from 50 to 1000 MHz, the ACQ629 provides a ...

    Frequency
    50 ~ 1,000MHz
    Output Power
    0.2W
    Gain
    38dB
    StatusProduction
    Freq. (MHz)50 ~ 1,000
    Gain (dB)38
    RFHIC's ACQ629 is a costefficient 75 Ohm GaAs EpHEMT MMIC lownoise amplifier designed for CATV and FTTH (GPON, GEPON) applications. Covering from 50 to 1000 MHz, the ACQ629 provides a high gain of 37.5 dB with 36 dBm OIP3 and 2 dB NF. This device is fabricated on Gallium Arsenide Enhancement Mode (GaAs EpHEMT), providing lower current draw, noise, and higher linearity. Leadfree and RoHS compliant.
  • Description

    RFHIC’s AE305 is a costefficient 75 Ohm GaAs EpHEMT MMIC lownoise amplifier designed for CATV, Satellite, and FTTH (GPON, GEPON) applications. Covering from 30 to 2650 MHz, the AE305 provides ...

    Frequency
    30 ~ 2,650MHz
    Output Power
    0.2W
    Gain
    15dB
    StatusProduction
    Freq. (MHz)30 ~ 2,650
    Gain (dB)15
    RFHIC's AE305 is a costefficient 75 Ohm GaAs EpHEMT MMIC lownoise amplifier designed for CATV, Satellite, and FTTH (GPON, GEPON) applications. Covering from 30 to 2650 MHz, the AE305 provides a high gain of 14.5 dB with 38 dBm OIP3 and 2.3 dB NF. This device is fabricated on Gallium Arsenide Enhancement Mode (GaAs EpHEMT), providing lower current draw, noise, and higher linearity. Leadfree and RoHS compliant.
  • Description

    RFHIC’s AE308 is a costefficient 75 Ohm GaAs EpHEMT MMIC lownoise amplifier designed for CATV, Satellite, and FTTH (GPON, GEPON) applications. Covering from 50 to 1000 MHz, the AE308 provides ...

    Frequency
    50 ~ 1,000MHz
    Output Power
    0.1W
    Gain
    22dB
    StatusProduction
    Freq. (MHz)50 ~ 1,000
    Gain (dB)22
    RFHIC's AE308 is a costefficient 75 Ohm GaAs EpHEMT MMIC lownoise amplifier designed for CATV, Satellite, and FTTH (GPON, GEPON) applications. Covering from 50 to 1000 MHz, the AE308 provides a high gain of 22 dB with 29 dBm OIP3 and 2 dB NF. This device is packaged in our low cost SOT89 surface mount (SMT) package. Leadfree and RoHS compliant.
  • Description

    RFHIC’s AE312 is a costefficient 75 Ohm GaAs EpHEMT MMIC lownoise amplifier designed for CATV and FTTH (GPON, GEPON) applications. Covering from 5 to 2700 MHz, the AE312 provides a ...

    Frequency
    30 ~ 2,655MHz
    Output Power
    0.1W
    Gain
    20dB
    StatusProduction
    Freq. (MHz)30 ~ 2,655
    Gain (dB)20
    RFHIC's AE312 is a costefficient 75 Ohm GaAs EpHEMT MMIC lownoise amplifier designed for CATV and FTTH (GPON, GEPON) applications. Covering from 5 to 2700 MHz, the AE312 provides a high gain of 20 dB with 32 dBm OIP3 and 1 dB NF. This device is fabricated on Gallium Arsenide Enhancement Mode (GaAs EpHEMT), providing lower current draw, noise, and higher linearity. Leadfree and RoHS compliant.
  • Description

    RFHIC’s AE314 is a costefficient 75 Ohm GaAs EpHEMT MMIC lownoise amplifier designed for CATV and FTTH (GPON, GEPON) applications. Covering from 30 to 2700 MHz, the AE314 provides a ...

    Frequency
    30 ~ 3,000MHz
    Output Power
    0.1W
    Gain
    23dB
    StatusProduction
    Freq. (MHz)30 ~ 3,000
    Gain (dB)23
    RFHIC's AE314 is a costefficient 75 Ohm GaAs EpHEMT MMIC lownoise amplifier designed for CATV and FTTH (GPON, GEPON) applications. Covering from 30 to 2700 MHz, the AE314 provides a high gain of 21 dB with 36 dBm OIP3 and 2 dB NF. This device is fabricated on Gallium Arsenide Enhancement Mode (GaAs EpHEMT), providing lower current draw, noise, and higher linearity. Leadfree and RoHS compliant.
  • Description

    RFHIC’s AE342A is a costefficient 75 Ohm GaAs EpHEMT MMIC lownoise amplifier designed for CATV and FTTH (GPON, GEPON) applications. Covering from 5 to 1100 MHz, the AE342A provides a ...

    Frequency
    5 ~ 1,100MHz
    Output Power
    0.1W
    Gain
    17dB
    StatusProduction
    Freq. (MHz)5 ~ 1,100
    Gain (dB)17
    RFHIC's AE342A is a costefficient 75 Ohm GaAs EpHEMT MMIC lownoise amplifier designed for CATV and FTTH (GPON, GEPON) applications. Covering from 5 to 1100 MHz, the AE342A provides a high gain of 16 dB with 36 dBm OIP3 and 1.7 dB NF. This device is fabricated on Gallium Arsenide Enhancement Mode (GaAs EpHEMT), providing lower current draw, noise, and higher linearity. Leadfree and RoHS compliant.
  • Description

    RFHIC’s AE417 is a costefficient 75 Ohm GaAs EpHEMT MMIC lownoise amplifier designed for CATV, Satellite, and FTTH (GPON, GEPON) applications. Covering from 5 to 1500 MHz, the AE417 provides ...

    Frequency
    5 ~ 1,100MHz
    Output Power
    0.3W
    Gain
    16dB
    StatusProduction
    Freq. (MHz)5 ~ 1,100
    Gain (dB)16
    RFHIC's AE417 is a costefficient 75 Ohm GaAs EpHEMT MMIC lownoise amplifier designed for CATV, Satellite, and FTTH (GPON, GEPON) applications. Covering from 5 to 1500 MHz, the AE417 provides a high gain of 14 dB with 40 dBm OIP3 and 3 dB NF. This device is fabricated on Gallium Arsenide Enhancement Mode (GaAs EpHEMT), providing lower current draw, noise, and higher linearity. Leadfree and RoHS compliant.
  • Description

    RFHIC’s AE427 is a costefficient 75 Ohm GaAs EpHEMT MMIC lownoise amplifier designed for CATV and FTTH (GPON, GEPON) applications. Covering from 5 to 2200 MHz, the AE427 provides a ...

    Frequency
    5 ~ 1,000MHz
    Output Power
    0.3W
    Gain
    25dB
    StatusProduction
    Freq. (MHz)5 ~ 1,000
    Gain (dB)25
    RFHIC's AE427 is a costefficient 75 Ohm GaAs EpHEMT MMIC lownoise amplifier designed for CATV and FTTH (GPON, GEPON) applications. Covering from 5 to 2200 MHz, the AE427 provides a high gain of 25 dB with 40 dBm OIP3 and 2 dB NF. This device is fabricated on Gallium Arsenide Enhancement Mode (GaAs EpHEMT), providing lower current draw, noise, and higher linearity. Leadfree and RoHS compliant.
  • Description

    RFHIC’s AE505 is a costefficient 75 Ohm GaAs EpHEMT MMIC lownoise amplifier designed for CATV, repeater, and base station systems. Covering from 30 to 2650 MHz, the AE505 provides a ...

    Frequency
    30 ~ 2,650MHz
    Output Power
    0.3W
    Gain
    14dB
    StatusProduction
    Freq. (MHz)30 ~ 2,650
    Gain (dB)14
    RFHIC's AE505 is a costefficient 75 Ohm GaAs EpHEMT MMIC lownoise amplifier designed for CATV, repeater, and base station systems. Covering from 30 to 2650 MHz, the AE505 provides a high gain of 14 dB with 41.5 dBm OIP3 and 3.4 dB NF. This device is fabricated on Gallium Arsenide Enhancement Mode (EpHEMT) to provide low current draw and noise. The AE505 is packaged in a SOIC8 surface mount (SMD) type to lower overall product cost. Leadfree and RoHS compliant.
  • Description

    RFHIC’s AE362 is a gallium arsenide (GaAs) EpHEMT MMIC, designed for global mobile communication systems (GSM) and intermediate frequency (IF) amplifier applications. Operating from 30 to 4000 MHz, the AE362 ...

    Frequency
    30 ~ 4,000MHz
    Output Power
    0.1W
    Gain
    15dB
    StatusProduction
    Freq. (MHz)30 ~ 4,000
    Gain (dB)15
    RFHIC's AE362 is a gallium arsenide (GaAs) EpHEMT MMIC, designed for global mobile communication systems (GSM) and intermediate frequency (IF) amplifier applications. Operating from 30 to 4000 MHz, the AE362 provides 20 dBm of output power at P1dB with a gain of 15.2 dB. The AE362 is packaged in a plastic surface mount (SMD) resulting in lower manufacturing costs. This device is leadfree and RoHS compliant.
  • Description

    RFHIC’s AE366 is a gallium arsenide (GaAs) EpHEMT MMIC, designed for global mobile communication systems (GSM) and intermediate frequency (IF) amplifier applications. Operating from 30 to 2200 MHz, the AE366 ...

    Frequency
    30 ~ 2,200MHz
    Output Power
    0.2W
    Gain
    23dB
    StatusProduction
    Freq. (MHz)30 ~ 2,200
    Gain (dB)23
    RFHIC's AE366 is a gallium arsenide (GaAs) EpHEMT MMIC, designed for global mobile communication systems (GSM) and intermediate frequency (IF) amplifier applications. Operating from 30 to 2200 MHz, the AE366 provides 22 dBm of output power at P1dB with a gain of 22.5 dB. The AE366 is packaged in a plastic surface mount (SMD) resulting in lower manufacturing costs. This device is leadfree and RoHS compliant.
  • Description

    RFHIC’s AE367 is a gallium arsenide (GaAs) EpHEMT MMIC, designed for global mobile communication systems (GSM) and intermediate frequency (IF) amplifier applications. Operating from 50 to 3500 MHz, the AE367 ...

    Frequency
    50 ~ 3,500MHz
    Output Power
    0.5W
    Gain
    16dB
    StatusProduction
    Freq. (MHz)50 ~ 3,500
    Gain (dB)16
    RFHIC's AE367 is a gallium arsenide (GaAs) EpHEMT MMIC, designed for global mobile communication systems (GSM) and intermediate frequency (IF) amplifier applications. Operating from 50 to 3500 MHz, the AE367 provides 27 dBm of output power at P1dB with a gain of 15.5 dB. The AE367 is packaged in a plastic surface mount (SMD) resulting in lower manufacturing costs. This device is leadfree and RoHS compliant.
  • Description

    RFHIC’s AE410 is a gallium arsenide (GaAs) EpHEMT MMIC, designed for global mobile communication systems (GSM) and intermediate frequency (IF) amplifier applications. Operating from 30 to 3000 MHz, the AE410 ...

    Frequency
    30 ~ 3,000MHz
    Output Power
    0.1W
    Gain
    20dB
    StatusProduction
    Freq. (MHz)30 ~ 3,000
    Gain (dB)20
    RFHIC's AE410 is a gallium arsenide (GaAs) EpHEMT MMIC, designed for global mobile communication systems (GSM) and intermediate frequency (IF) amplifier applications. Operating from 30 to 3000 MHz, the AE410 provides 20 dBm of output power at P1dB with a gain of 20 dB. The AE410 is packaged in a plastic surface mount (SMD) resulting in lower manufacturing costs. This device is leadfree and RoHS compliant.
  • Description

    RFHIC’s AP205A is a gallium arsenide (GaAs) MESFET amplifier, designed for global mobile communication systems (GSM) and codedivision multiple access (DMA) applications. Operating from 50 to 3500 MHz, the AP205A ...

    Frequency
    50 ~ 3,000MHz
    Output Power
    0.2W
    Gain
    14dB
    StatusProduction
    Freq. (MHz)50 ~ 3,000
    Gain (dB)14
    RFHIC's AP205A is a gallium arsenide (GaAs) MESFET amplifier, designed for global mobile communication systems (GSM) and codedivision multiple access (DMA) applications. Operating from 50 to 3500 MHz, the AP205A provides 22 dBm of output power at P1dB with a gain of 14 dB. The AP205A is packaged in a plastic surface mount (SMD) resulting in lower manufacturing costs. This device is leadfree and RoHS compliant.
  • Description

    RFHIC’s AP209 is a gallium arsenide (GaAs) MESFET amplifier, designed for global mobile communication systems (GSM) and codedivision multiple access (DMA) applications. Operating from 50 to 3500 MHz, the AP209 ...

    Frequency
    50 ~ 3,000MHz
    Output Power
    0.3W
    Gain
    14dB
    StatusProduction
    Freq. (MHz)50 ~ 3,000
    Gain (dB)14
    RFHIC's AP209 is a gallium arsenide (GaAs) MESFET amplifier, designed for global mobile communication systems (GSM) and codedivision multiple access (DMA) applications. Operating from 50 to 3500 MHz, the AP209 provides 24 dBm of output power at P1dB with a gain of 13.5 dB. The AP209 is packaged in a plastic surface mount (SMD) resulting in lower manufacturing costs. This device is leadfree and RoHS compliant.
  • Description

    RFHIC’s AE608 is a gallium arsenide (GaAs) MESFET amplifier, designed for global mobile communication systems (GSM) and intermediate frequency (IF) amplifier applications. Operating from 10 to 4000 MHz, the AE608 ...

    Frequency
    10 ~ 4,000MHz
    Output Power
    0.0W
    Gain
    14dB
    StatusProduction
    Freq. (MHz)10 ~ 4,000
    Gain (dB)14
    RFHIC's AE608 is a gallium arsenide (GaAs) MESFET amplifier, designed for global mobile communication systems (GSM) and intermediate frequency (IF) amplifier applications. Operating from 10 to 4000 MHz, the AE608 provides 14 dBm of output power at P1dB with a gain of 14 dB and high OIP3 levels of 32 dBm. The AE608 is packaged in a plastic surface mount (SMD) resulting in lower manufacturing costs. This device is leadfree and RoHS compliant.
  • Description

    RFHIC’s AE379 is a gallium arsenide (GaAs) EpHEMT MMIC, designed ideally for RFID, and femtocell applications. Operating from 50 to 3500 MHz, the AE379 provides 33 dBm of output power ...

    Frequency
    50 ~ 3,500MHz
    Output Power
    0.2W
    Gain
    12dB
    StatusProduction
    Freq. (MHz)50 ~ 3,500
    Gain (dB)12
    RFHIC's AE379 is a gallium arsenide (GaAs) EpHEMT MMIC, designed ideally for RFID, and femtocell applications. Operating from 50 to 3500 MHz, the AE379 provides 33 dBm of output power at P1dB with a gain of 11.5 dB and high OIP3 levels of 43 dBm. The AE379 is packaged in a plastic surface mount (SMD) resulting in lower manufacturing costs. This device is leadfree and RoHS compliant.
  • Description

    RFHIC’s AE368 is a gallium arsenide (GaAs) EpHEMT MMIC, designed ideally for satellite systems, RFID, and femtocell applications. Operating from 50 to 3500 MHz, the AE368 provides 30 dBm of ...

    Frequency
    50 ~ 3,500MHz
    Output Power
    1.1W
    Gain
    14dB
    StatusProduction
    Freq. (MHz)50 ~ 3,500
    Gain (dB)14
    RFHIC's AE368 is a gallium arsenide (GaAs) EpHEMT MMIC, designed ideally for satellite systems, RFID, and femtocell applications. Operating from 50 to 3500 MHz, the AE368 provides 30 dBm of output power at P1dB with a gain of 13.7 dB and high OIP3 levels of 48 dBm. The AE368 is packaged in a plastic surface mount (SMD) resulting in lower manufacturing costs. This device is leadfree and RoHS compliant.
  • Description

    RFHIC’s AE510 is a costefficient 75 Ohm GaAs EpHEMT MMIC lownoise amplifier designed for CATV, cable modem, and FTTH (GPON, GEPON) applications. Covering from 30 to 3000 MHz, the AE510 ...

    Frequency
    30 ~ 3,000MHz
    Output Power
    0.2W
    Gain
    19dB
    StatusProduction
    Freq. (MHz)30 ~ 3,000
    Gain (dB)19
    RFHIC's AE510 is a costefficient 75 Ohm GaAs EpHEMT MMIC lownoise amplifier designed for CATV, cable modem, and FTTH (GPON, GEPON) applications. Covering from 30 to 3000 MHz, the AE510 provides a high gain of 19 dB with 40 dBm OIP3 and 3 dB NF. This device is fabricated on Gallium Arsenide Enhancement Mode (GaAs EpHEMT) to provide low current draw and noise. The AE510 is packaged in a SOIC8 surface mount (SMD) type to lower overall product cost. Leadfree and RoHS compliant.
  • Description

    RFHIC’s AE512 is a costefficient 75 Ohm GaAs EpHEMT MMIC lownoise amplifier designed for CATV, cable modem, and FTTH (GPON, GEPON) applications. Covering from 30 to 2150 MHz, the AE512 ...

    Frequency
    30 ~ 2,150MHz
    Output Power
    0.1W
    Gain
    17dB
    StatusProduction
    Freq. (MHz)30 ~ 2,150
    Gain (dB)17
    RFHIC's AE512 is a costefficient 75 Ohm GaAs EpHEMT MMIC lownoise amplifier designed for CATV, cable modem, and FTTH (GPON, GEPON) applications. Covering from 30 to 2150 MHz, the AE512 provides a high gain of 17 dB with 34 dBm OIP3 and 1.5 dB NF. This device is fabricated on Gallium Arsenide Enhancement Mode (GaAs EpHEMT) to provide low current draw and noise. The AE512 is packaged in a SOIC8 surface mount (SMD) type to lower overall product cost. Leadfree and RoHS compliant.
  • Description

    RFHIC’s AE607 is a costefficient 75 Ohm GaAs EpHEMT MMIC lownoise amplifier designed for CATV and FTTH (GPON, GEPON) applications. Covering from 5 to 1500 MHz, the AE607 provides a ...

    Frequency
    5 ~ 1,500MHz
    Output Power
    0.6W
    Gain
    13dB
    StatusProduction
    Freq. (MHz)5 ~ 1,500
    Gain (dB)13
    RFHIC's AE607 is a costefficient 75 Ohm GaAs EpHEMT MMIC lownoise amplifier designed for CATV and FTTH (GPON, GEPON) applications. Covering from 5 to 1500 MHz, the AE607 provides a high gain of 12.5 dB with 43 dBm OIP3 and 3.5 dB NF. This device is fabricated on Gallium Arsenide Enhancement Mode (GaAs EpHEMT), providing lower current draw, noise, and higher linearity. Leadfree and RoHS compliant.
  • Description

    RFHIC’s AE617 is a costefficient 75 Ohm GaAs EpHEMT MMIC lownoise amplifier designed for CATV and FTTH (GPON, GEPON) applications. Covering from 5 to 1500 MHz, the AE617 provides a ...

    Frequency
    5 ~ 1,000MHz
    Output Power
    0.6W
    Gain
    22dB
    StatusProduction
    Freq. (MHz)5 ~ 1,000
    Gain (dB)22
    RFHIC's AE617 is a costefficient 75 Ohm GaAs EpHEMT MMIC lownoise amplifier designed for CATV and FTTH (GPON, GEPON) applications. Covering from 5 to 1500 MHz, the AE617 provides a high gain of 22 dB with 43 dBm OIP3 and 2.3 dB NF. This device is fabricated on Gallium Arsenide Enhancement Mode (GaAs EpHEMT), providing lower current draw, noise, and higher linearity. Leadfree and RoHS compliant.
  • Description

    RFHIC’s AE618 is a costefficient 75 Ohm GaAs EpHEMT MMIC lownoise amplifier designed for CATV and FTTH (GPON, GEPON) applications. Covering from 5 to 1300 MHz, the AE618 provides a ...

    Frequency
    30 ~ 1,000MHz
    Output Power
    1.6W
    Gain
    20dB
    StatusProduction
    Freq. (MHz)30 ~ 1,000
    Gain (dB)20
    RFHIC's AE618 is a costefficient 75 Ohm GaAs EpHEMT MMIC lownoise amplifier designed for CATV and FTTH (GPON, GEPON) applications. Covering from 5 to 1300 MHz, the AE618 provides a high gain of 20 dB with 44 dBm OIP3 and 2.5 dB NF. This device is fabricated on Gallium Arsenide Enhancement Mode (GaAs EpHEMT), providing lower current draw, noise, and higher linearity. Leadfree and RoHS compliant.
  • Category