Module Amplifiers

With our unparalleled expertise in GaN technology, we offer users with cutting edge GaN Transmit and receive (T/R) Modules, suited for a variety of radar applications. Our state-of-the-art T/R modules

With our unparalleled expertise in GaN technology, we offer users with cutting edge GaN Transmit and receive (T/R) Modules, suited for a variety of radar applications. Our state-of-the-art T/R modules offer higher power and better efficiency in a more compact design format. Customizable designs are available upon request.

With our unparalleled expertise in GaN technology, we offer users with cutting edge GaN Transmit and receive (T/R) Modules, suited for a variety of radar applications. Our state-of-the-art T/R modules

With our unparalleled expertise in GaN technology, we offer users with cutting edge GaN Transmit and receive (T/R) Modules, suited for a variety of radar applications. Our state-of-the-art T/R modules offer higher power and better efficiency in a more compact design format. Customizable designs are available upon request.
  • Description

    RFHIC’s RIM132K0-20 is a 2kW GaN SiC solid-state power amplifier designed for industrial, scientific, and medical applications operating at 1295 to 1305 MHz. Fabricated with RFHIC’s state of the art ...

    Frequency
    1,295 ~ 1,305MHz
    Output Power
    2,000.0W
    Efficiency
    65%
    StatusSample available
    Freq. (MHz)1,295 ~ 1,305
    RFHIC's RIM132K0-20 is a 2kW GaN SiC solid-state power amplifier designed for industrial, scientific, and medical applications operating at 1295 to 1305 MHz. Fabricated with RFHIC's state of the art GaN HEMTs, this solid-state amplifier provides users with 65% drain efficiency, operating from 50V DC supply. This power amplifier provides excellent thermal stability and ruggedness and is fully matched to 50 Ohms. This SWaP-C SSPA is an ideal replacement for legacy tube-based systems, offering better reliability without the need for high voltage power supply. Lead-free and RoHS compliant. Custom designs are available upon request.
  • Description

    RFHIC’s RNP58200-C2 is a 200W GaN Solid-State Power Amplifier (SSPA) designed ideally for industrial, medical, and scientific applications. Operable at 5725-5875 MHz fabricated with our GaN on SiC HEMTs. This ...

    Frequency
    5,725 ~ 5,875MHz
    Output Power
    53.0W
    Gain
    30dB
    Efficiency
    31%
    StatusSample available
    Freq. (MHz)5,725 ~ 5,875
    Gain (dB)30
    RFHIC's RNP58200-C2 is a 200W GaN Solid-State Power Amplifier (SSPA) designed ideally for industrial, medical, and scientific applications. Operable at 5725-5875 MHz fabricated with our GaN on SiC HEMTs. This compact GaN power amplifier provides a power-added efficiency of 31% at 40V and a typical power gain of 30dB. Custom designs are available upon request.  
  • Description

    RIM092K0-20 using GaN-on-SiC transistors is designed for industrial, scientific, medical (ISM) and plasma applications at 915MHz. RIM092K0-20 is the world’s highest power and efficiency SSPA with affordable price. This amplifier ...

    Frequency
    900 ~ 930MHz
    Output Power
    2,000.0W
    Efficiency
    63%
    StatusProduction
    Freq. (MHz)900 ~ 930
    RIM092K0-20 using GaN-on-SiC transistors is designed for industrial, scientific, medical (ISM) and plasma applications at 915MHz. RIM092K0-20 is the world’s highest power and efficiency SSPA with affordable price. This amplifier is suitable for use in CW, ISM applications. This high efficiency rugged device is targeted to replace industrial magnetrons and other vacuum tubes which are currently applying into high power industrial applications, artificial diamond manufacturing, semiconductor equipment, and plasma systems.
  • Description

    RFHIC’s RRM9395200-56 is a 200 W GaN module amplifier designed for radar systems applications. Operating from 9300 to 9500 MHz, the RRM9395200-56 achieves 56 dB of gain with an efficiency ...

    Frequency
    9,300 ~ 9,500MHz
    Output Power
    200.0W
    Gain
    56dB
    Efficiency
    20%
    StatusSample available
    Freq. (MHz)9,300 ~ 9,500
    Gain (dB)56
    RFHIC's RRM9395200-56 is a 200 W GaN module amplifier designed for radar systems applications. Operating from 9300 to 9500 MHz, the RRM9395200-56 achieves 56 dB of gain with an efficiency of 20%. The RRM9395200-56 utilizes our in-house GaN on SiC technology, resulting in higher breakdown voltage, wider bandwidth, and higher efficiency. Both RF ports have integrated DC blocking capacitors and are fully matched to 50 Ohms. Customizable products are available upon request. Lead-free and RoHS compliant.
  • Description

    RFHIC’s RRP54591K3-43 is a C-band, GaN Pulse amplifier designed for Radar system applications. The RRP54591K3-43 is operable from 5.4 to 5.9 GHz and has an output pulse power of 1200kW, ...

    Frequency
    5,400 ~ 5,899MHz
    Output Power
    1,200.0W
    Gain
    43dB
    Efficiency
    35%
    StatusSample available
    Freq. (MHz)5,400 ~ 5,899
    Gain (dB)43
    RFHIC's RRP54591K3-43 is a C-band, GaN Pulse amplifier designed for Radar system applications. The RRP54591K3-43 is operable from 5.4 to 5.9 GHz and has an output pulse power of 1200kW, with a duty cycle of 10%. The amplifier is fabricated using RFHIC's cutting edge GaN HEMT technology, providing higher breakdown voltage, wider bandwidth, and high efficiency. Custom designs are available at the Module and Rack Mount System Level upon request. Lead-free and RoHS compliant.
  • RNP24800-20

    Module Amplifiers

    RNP24800-20

    Description

    RFHIC’s RNP24800-20 is a 800 W, GaN solid-state power amplifier (SSPA) which operates from 2400~2500 MHz. It has a drain efficiency of 53% and is capable of both CW and ...

    Frequency
    2,400 ~ 2,500MHz
    Output Power
    800.0W
    Gain
    45dB
    Efficiency
    53%
    StatusSample available
    Freq. (MHz)2,400 ~ 2,500
    Gain (dB)45
    RFHIC's RNP24800-20 is a 800 W, GaN solid-state power amplifier (SSPA) which operates from 2400~2500 MHz. It has a drain efficiency of 53% and is capable of both CW and pulsed operations. The RNP24800-20 is equipped with RFHIC's GaN on SiC HEMT, providing higher efficiency, reliability, and linearity. The device is fully matched to 50-Ohms with integrated DC blocking capacitors on both RF ports to simplify system integration. The RNP24800-20 is ideal for microwave chemical vapor deposition (CVD) reactors, plasma generators, and industrial heating systems. Custom designs are available upon request. Lead-free and RoHS compliant.
  • Description

    RFHIC’s RIM251K6-20 is a 1.6kW, GaN solid-state module amplifier (SSPA) which operates from 2400 to 2500 MHz. It has a drain efficiency of 53% and is capable of both CW ...

    Frequency
    2,400 ~ 2,500MHz
    Output Power
    1,600.0W
    Gain
    60dB
    Efficiency
    53%
    StatusSample available
    Freq. (MHz)2,400 ~ 2,500
    Gain (dB)60
    RFHIC's RIM251K6-20 is a 1.6kW, GaN solid-state module amplifier (SSPA) which operates from 2400 to 2500 MHz. It has a drain efficiency of 53% and is capable of both CW and pulsed operations. The RIM251K6-20 is equipped with RFHIC's GaN on SiC HEMT, providing higher efficiency, reliability, and linearity. The device is fully matched to 50-Ohms with integrated DC blocking capacitors on both RF ports to simplify system integration. The RIM251K6-20 is ideal for microwave chemical vapor deposition (CVD) reactors, plasma generators, and industrial heating systems. Custom designs are available upon request. Lead-free and RoHS compliant.
  • Description

    RFHIC’s RNP24300-20 is a 300 W, GaN solid-state power amplifier (SSPA) which operates from 2400~2500 MHz. It has a drain efficiency of 56% and is capable of both CW and ...

    Frequency
    2,400 ~ 2,500MHz
    Output Power
    300.0W
    Gain
    55dB
    Efficiency
    56%
    StatusSample available
    Freq. (MHz)2,400 ~ 2,500
    Gain (dB)55
    RFHIC's RNP24300-20 is a 300 W, GaN solid-state power amplifier (SSPA) which operates from 2400~2500 MHz. It has a drain efficiency of 56% and is capable of both CW and pulsed operations. The RNP24300-20 is equipped with RFHIC's GaN on SiC HEMT, providing higher efficiency, reliability, and linearity. The device is fully matched to 50-Ohms with integrated DC blocking capacitors on both RF ports to simplify system integration. The RNP24300-20 is ideal for microwave chemical vapor deposition (CVD) reactors, plasma generators, and industrial heating systems. Custom designs are available upon request. Lead-free and RoHS compliant.
  • Description

    RFHIC’s RNP24550-21 is a 550 W, GaN solid-state power amplifier (SSPA) which operates from 2400~2500 MHz. It has a drain efficiency of 55% and is capable of both CW and ...

    Frequency
    2,400 ~ 2,500MHz
    Output Power
    550.0W
    Gain
    43dB
    Efficiency
    55%
    StatusProduction
    Freq. (MHz)2,400 ~ 2,500
    Gain (dB)43
    RFHIC's RNP24550-21 is a 550 W, GaN solid-state power amplifier (SSPA) which operates from 2400~2500 MHz. It has a drain efficiency of 55% and is capable of both CW and pulsed operations. The RNP24550-21 is equipped with RFHIC's GaN on SiC HEMT, providing higher efficiency, reliability, and linearity. The device is fully matched to 50-Ohms with integrated DC blocking capacitors on both RF ports to simplify system integration. The RNP24550-21 is ideal for microwave chemical vapor deposition (CVD) reactors, plasma generators, and industrial heating systems. Custom designs are available upon request. Lead-free and RoHS compliant.
  • Description

    RFHIC’s RNP24150-20 is a 150 W, GaN solid-state power amplifier (SSPA) which operates from 2400~2500 MHz. It has a drain efficiency of 60% and is capable of both CW and ...

    Frequency
    2,400 ~ 2,500MHz
    Output Power
    150.0W
    Gain
    52dB
    Efficiency
    60%
    StatusSample available
    Freq. (MHz)2,400 ~ 2,500
    Gain (dB)52
    RFHIC's RNP24150-20 is a 150 W, GaN solid-state power amplifier (SSPA) which operates from 2400~2500 MHz. It has a drain efficiency of 60% and is capable of both CW and pulsed operations. The RNP24150-20 is equipped with RFHIC's GaN on SiC HEMT, providing higher efficiency, reliability, and linearity. The device is fully matched to 50-Ohms with integrated DC blocking capacitors on both RF ports to simplify system integration. The RNP24150-20 is ideal for microwave chemical vapor deposition (CVD) reactors, plasma generators, and industrial heating systems. Custom designs are available upon request. Lead-free and RoHS compliant.
  • Description

    RFHIC’s RNP24200-20 is a 200 W, GaN solid-state power amplifier (SSPA) which operates from 2400~2500 MHz. It has a drain efficiency of 57% and is capable of both CW and ...

    Frequency
    2,400 ~ 2,500MHz
    Output Power
    200.0W
    Gain
    53dB
    Efficiency
    57%
    StatusSample available
    Freq. (MHz)2,400 ~ 2,500
    Gain (dB)53
    RFHIC's RNP24200-20 is a 200 W, GaN solid-state power amplifier (SSPA) which operates from 2400~2500 MHz. It has a drain efficiency of 57% and is capable of both CW and pulsed operations. The RNP24200-20 is equipped with RFHIC's GaN on SiC HEMT, providing higher efficiency, reliability, and linearity. The device is fully matched to 50-Ohms with integrated DC blocking capacitors on both RF ports to simplify system integration. The RNP24200-20 is ideal for microwave chemical vapor deposition (CVD) reactors, plasma generators, and industrial heating systems. Custom designs are available upon request. Lead-free and RoHS compliant.
  • Description

    RFHIC’s RFM245-10 is a 100 W, RF CW GaN solid-state power amplifier (SSPA)generator ideally designed for medical equipment applications. It has a drain efficiency of 37% and is capable of ...

    Frequency
    2,400 ~ 2,500MHz
    Output Power
    100.0W
    Efficiency
    37%
    StatusSample available
    Freq. (MHz)2,400 ~ 2,500
    RFHIC's RFM245-10 is a 100 W, RF CW GaN solid-state power amplifier (SSPA)generator ideally designed for medical equipment applications. It has a drain efficiency of 37% and is capable of both CW and pulsed operations. This device comes with a signal attenuator and is fully matched to 50-Ohms. Custom designs are available upon request. Lead-free and RoHS compliant.
  • Description

    RFHIC’s RNP24100-20 is a 100 W, GaN solid-state power amplifier (SSPA) which operates from 2400 to 2500 MHz. It has a drain efficiency of 60% and is capable of both ...

    Frequency
    2,400 ~ 2,500MHz
    Output Power
    100.0W
    Gain
    50dB
    Efficiency
    60%
    StatusSample available
    Freq. (MHz)2,400 ~ 2,500
    Gain (dB)50
    RFHIC's RNP24100-20 is a 100 W, GaN solid-state power amplifier (SSPA) which operates from 2400 to 2500 MHz. It has a drain efficiency of 60% and is capable of both CW and pulsed operations. The RNP24100-20 is equipped with RFHIC's GaN on SiC HEMT, providing higher efficiency, reliability, and linearity. The device is fully matched to 50-Ohms with integrated DC blocking capacitors on both RF ports to simplify system integration. The RNP24100-20 is ideal for microwave chemical vapor deposition (CVD) reactors, plasma generators, and industrial heating systems. Custom designs are available upon request. Lead-free and RoHS compliant.
  • Description

    RFHIC’s RYP24200-20S is a 200 W, GaN solid-state power amplifier (SSPA) which operates from 2400~2500 MHz. It has a drain efficiency of 68% and is capable of both CW and ...

    Frequency
    2,400 ~ 2,500MHz
    Output Power
    200.0W
    Gain
    28dB
    Efficiency
    68%
    StatusSample available
    Freq. (MHz)2,400 ~ 2,500
    Gain (dB)28
    RFHIC's RYP24200-20S is a 200 W, GaN solid-state power amplifier (SSPA) which operates from 2400~2500 MHz. It has a drain efficiency of 68% and is capable of both CW and pulsed operations. The RYP24200-20S is equipped with RFHIC's GaN on SiC HEMT, providing higher efficiency, reliability, and linearity. The device is fully matched to 50-Ohms with integrated DC blocking capacitors on both RF ports to simplify system integration. The RYP24200-20S is ideal for microwave chemical vapor deposition (CVD) reactors, plasma generators, and industrial heating systems. Custom designs are available upon request. Lead-free and RoHS compliant.
  • Description

    RFHIC’s RCP25400-20L is a 400 W, GaN solid-state power amplifier (SSPA) which operates from 2400~2500 MHz. It has a drain efficiency of 63% and is capable of both CW and ...

    Frequency
    2,400 ~ 2,500MHz
    Output Power
    400.0W
    Gain
    13dB
    Efficiency
    63%
    StatusSample available
    Freq. (MHz)2,400 ~ 2,500
    Gain (dB)13
    RFHIC's RCP25400-20L is a 400 W, GaN solid-state power amplifier (SSPA) which operates from 2400~2500 MHz. It has a drain efficiency of 63% and is capable of both CW and pulsed operations. The RCP25400-20L is equipped with RFHIC's GaN on SiC HEMT, providing higher efficiency, reliability, and linearity. The device is fully matched to 50-Ohms with integrated DC blocking capacitors on both RF ports to simplify system integration. The RCP25400-20L is ideal for microwave chemical vapor deposition (CVD) reactors, plasma generators, and industrial heating systems. Custom designs are available upon request. Lead-free and RoHS compliant.
  • Description

    RFHIC’s RIM091K1-20 is a 1kW, GaN solid-state power amplifier (SSPA) which operates from 910-930 MHz. It has a drain efficiency of 63% and is capable of both CW and pulsed ...

    Frequency
    900 ~ 930MHz
    Output Power
    1,100.0W
    Gain
    50dB
    Efficiency
    63%
    StatusSample available
    Freq. (MHz)900 ~ 930
    Gain (dB)50
    RFHIC's RIM091K1-20 is a 1kW, GaN solid-state power amplifier (SSPA) which operates from 910-930 MHz. It has a drain efficiency of 63% and is capable of both CW and pulsed operations. The RIM091K1-20 is equipped with RFHIC's GaN on SiC HEMT, providing higher efficiency, reliability, and linearity. The device is fully matched to 50-Ohms with integrated DC blocking capacitors on both RF ports to simplify system integration. The RIM091K1-20 is ideal for microwave chemical vapor deposition (CVD) reactors, plasma generators, and industrial heating systems. Custom designs are available upon request. Lead-free and RoHS compliant.
  • Description

    RFHIC’s RIM091K5-20 is a 1.5kW, GaN solid-state power amplifier (SSPA) which operates from 900-930 MHz. It has a drain efficiency of 63% and is capable of both CW and pulsed ...

    Frequency
    900 ~ 930MHz
    Output Power
    1,500.0W
    Gain
    50dB
    Efficiency
    63%
    StatusSample available
    Freq. (MHz)900 ~ 930
    Gain (dB)50
    RFHIC's RIM091K5-20 is a 1.5kW, GaN solid-state power amplifier (SSPA) which operates from 900-930 MHz. It has a drain efficiency of 63% and is capable of both CW and pulsed operations. The RIM091K5-20 is equipped with RFHIC's GaN on SiC HEMT, providing higher efficiency, reliability, and linearity. The device is fully matched to 50-Ohms with integrated DC blocking capacitors on both RF ports to simplify system integration. The RNP091K5-20 is ideal for microwave chemical vapor deposition (CVD) reactors, plasma generators, and industrial heating systems. Custom designs are available upon request. Lead-free and RoHS compliant.
  • Description

    RFHIC’s RNP09550-20 is a 550 W, GaN solid-state power amplifier (SSPA) which operates from 910-920 MHz. It has a drain efficiency of 66% and is capable of both CW and ...

    Frequency
    910 ~ 920MHz
    Output Power
    550.0W
    Gain
    60dB
    Efficiency
    66%
    StatusSample available
    Freq. (MHz)910 ~ 920
    Gain (dB)60
    RFHIC's RNP09550-20 is a 550 W, GaN solid-state power amplifier (SSPA) which operates from 910-920 MHz. It has a drain efficiency of 66% and is capable of both CW and pulsed operations. The RNP09550-20 is equipped with RFHIC's GaN on SiC HEMT, providing higher efficiency, reliability, and linearity. The device is fully matched to 50-Ohms with integrated DC blocking capacitors on both RF ports to simplify system integration. The RNP09550-20 is ideal for microwave chemical vapor deposition (CVD) reactors, plasma generators, and industrial heating systems. Custom designs are available upon request. Lead-free and RoHS compliant.
  • Description

    RFHIC’s RRP291K0-10 is a 1100 W GaN module amplifier designed for radar systems applications. Operating from 2700 to 3100 MHz, the RRP291K0-10 achieves 60.5 dB of gain with an efficiency ...

    Frequency
    2,700 ~ 3,100MHz
    Output Power
    1,100.0W
    Gain
    61dB
    Efficiency
    35%
    StatusProduction
    Freq. (MHz)2,700 ~ 3,100
    Gain (dB)61
    RFHIC's RRP291K0-10 is a 1100 W GaN module amplifier designed for radar systems applications. Operating from 2700 to 3100 MHz, the RRP291K0-10 achieves 60.5 dB of gain with an efficiency of 35%. The RRP291K0-10 utilizes our in-house GaN on SiC technology, resulting in higher breakdown voltage, wider bandwidth, and higher efficiency. Both RF ports have integrated DC blocking capacitors and are fully matched to 50 Ohms. Customizable products are available upon request. Lead-free and RoHS compliant.
  • Description

    RFHIC’s RRP162168020-17A is a 20 W GaN module amplifier designed for radar systems applications. Operating from 16200 to 16800 MHz, the RRP162168020-17A achieves 17 dB of gain with an efficiency ...

    Frequency
    16,200 ~ 16,800MHz
    Output Power
    20.0W
    Gain
    17dB
    Efficiency
    25%
    StatusProduction
    Freq. (MHz)16,200 ~ 16,800
    Gain (dB)17
    RFHIC's RRP162168020-17A is a 20 W GaN module amplifier designed for radar systems applications. Operating from 16200 to 16800 MHz, the RRP162168020-17A achieves 17 dB of gain with an efficiency of 25%. The RRP162168020-17A utilizes our in-house GaN on SiC technology, resulting in higher breakdown voltage, wider bandwidth, and higher efficiency. Both RF ports have integrated DC blocking capacitors and are fully matched to 50 Ohms. Customizable products are available upon request. Lead-free and RoHS compliant.
  • Description

    RFHIC’s RRP162168050-05A is a 50 W GaN module amplifier designed for radar systems applications. Operating from 16200 to 16800 MHz, the RRP162168050-05A achieves 5 dB of gain with an efficiency ...

    Frequency
    16,200 ~ 16,800MHz
    Output Power
    50.0W
    Gain
    5dB
    Efficiency
    30%
    StatusSample available
    Freq. (MHz)16,200 ~ 16,800
    Gain (dB)5
    RFHIC's RRP162168050-05A is a 50 W GaN module amplifier designed for radar systems applications. Operating from 16200 to 16800 MHz, the RRP162168050-05A achieves 5 dB of gain with an efficiency of 30%. The RRP162168050-05A utilizes our in-house GaN on SiC technology, resulting in higher breakdown voltage, wider bandwidth, and higher efficiency. Both RF ports have integrated DC blocking capacitors and are fully matched to 50 Ohms. Customizable products are available upon request. Lead-free and RoHS compliant.
  • Description

    RFHIC’s RRP162168020-07A is a 20 W GaN module amplifier designed for radar systems applications. Operating from 16200 to 16800 MHz, the RRP162168020-07A achieves 7 dB of gain with an efficiency ...

    Frequency
    16,200 ~ 16,800MHz
    Output Power
    20.0W
    Gain
    7dB
    Efficiency
    35%
    StatusSample available
    Freq. (MHz)16,200 ~ 16,800
    Gain (dB)7
    RFHIC's RRP162168020-07A is a 20 W GaN module amplifier designed for radar systems applications. Operating from 16200 to 16800 MHz, the RRP162168020-07A achieves 7 dB of gain with an efficiency of 35%. The RRP162168020-07A utilizes our in-house GaN on SiC technology, resulting in higher breakdown voltage, wider bandwidth, and higher efficiency. Both RF ports have integrated DC blocking capacitors and are fully matched to 50 Ohms. Customizable products are available upon request. Lead-free and RoHS compliant.
  • Description

    RFHIC’s RRP27312K5-30 is a 2800 W GaN module amplifier designed for radar systems applications. Operating from 2700 to 3100 MHz, the RRP27312K5-30 achieves 30 dB of gain with an efficiency ...

    Frequency
    2,700 ~ 3,100MHz
    Output Power
    2,800.0W
    Gain
    30dB
    Efficiency
    40%
    StatusSample available
    Freq. (MHz)2,700 ~ 3,100
    Gain (dB)30
    RFHIC's RRP27312K5-30 is a 2800 W GaN module amplifier designed for radar systems applications. Operating from 2700 to 3100 MHz, the RRP27312K5-30 achieves 30 dB of gain with an efficiency of 40%. The RRP27312K5-30 utilizes our in-house GaN on SiC technology, resulting in higher breakdown voltage, wider bandwidth, and higher efficiency. Both RF ports have integrated DC blocking capacitors and are fully matched to 50 Ohms. Customizable products are available upon request. Lead-free and RoHS compliant.
  • Description

    RFHIC’s RRP5257550-35 is a 630 W GaN module amplifier designed for radar systems applications. Operating from 5250 to 5750 MHz, the RRP5257550-35 achieves 35 dB of gain with an efficiency ...

    Frequency
    5,250 ~ 5,750MHz
    Output Power
    630.0W
    Gain
    35dB
    Efficiency
    30%
    StatusObsolete
    Freq. (MHz)5,250 ~ 5,750
    Gain (dB)35
    RFHIC's RRP5257550-35 is a 630 W GaN module amplifier designed for radar systems applications. Operating from 5250 to 5750 MHz, the RRP5257550-35 achieves 35 dB of gain with an efficiency of 30%. The RRP5257550-35 utilizes our in-house GaN on SiC technology, resulting in higher breakdown voltage, wider bandwidth, and higher efficiency. Both RF ports have integrated DC blocking capacitors and are fully matched to 50 Ohms. Customizable products are available upon request. Lead-free and RoHS compliant.
  • Description

    RFHIC’s RRP31352K6-20 is a 3000 W GaN module amplifier designed for radar systems applications. Operating from 3100 to 3500 MHz, the RRP31352K6-20 achieves 21 dB of gain with an efficiency ...

    Frequency
    3,100 ~ 3,500MHz
    Output Power
    3,000.0W
    Gain
    21dB
    Efficiency
    42%
    StatusObsolete
    Freq. (MHz)3,100 ~ 3,500
    Gain (dB)21
    RFHIC's RRP31352K6-20 is a 3000 W GaN module amplifier designed for radar systems applications. Operating from 3100 to 3500 MHz, the RRP31352K6-20 achieves 21 dB of gain with an efficiency of 42%. The RRP31352K6-20 utilizes our in-house GaN on SiC technology, resulting in higher breakdown voltage, wider bandwidth, and higher efficiency. Both RF ports have integrated DC blocking capacitors and are fully matched to 50 Ohms. Customizable products are available upon request. Lead-free and RoHS compliant.
  • Description

    RFHIC’s RRP090100120-15 is a 120 W GaN module amplifier designed for radar systems applications. Operating from 9000 to 10000 MHz, the RRP090100120-15 achieves 15 dB of gain with an efficiency ...

    Frequency
    9,000 ~ 10,000MHz
    Output Power
    120.0W
    Gain
    15dB
    Efficiency
    30%
    StatusSample available
    Freq. (MHz)9,000 ~ 10,000
    Gain (dB)15
    RFHIC's RRP090100120-15 is a 120 W GaN module amplifier designed for radar systems applications. Operating from 9000 to 10000 MHz, the RRP090100120-15 achieves 15 dB of gain with an efficiency of 30%. The RRP090100120-15 utilizes our in-house GaN on SiC technology, resulting in higher breakdown voltage, wider bandwidth, and higher efficiency. Both RF ports have integrated DC blocking capacitors and are fully matched to 50 Ohms. Customizable products are available upon request. Lead-free and RoHS compliant.
  • Description

    RFHIC’s RRP9095150-18 is a 150 W GaN module amplifier designed for radar systems applications. Operating from 9000 to 9500 MHz, the RRP9095150-18 achieves 18 dB of gain with an efficiency ...

    Frequency
    9,000 ~ 9,500MHz
    Output Power
    150.0W
    Gain
    18dB
    Efficiency
    35%
    StatusSample available
    Freq. (MHz)9,000 ~ 9,500
    Gain (dB)18
    RFHIC's RRP9095150-18 is a 150 W GaN module amplifier designed for radar systems applications. Operating from 9000 to 9500 MHz, the RRP9095150-18 achieves 18 dB of gain with an efficiency of 35%. The RRP9095150-18 utilizes our in-house GaN on SiC technology, resulting in higher breakdown voltage, wider bandwidth, and higher efficiency. Both RF ports have integrated DC blocking capacitors and are fully matched to 50 Ohms. Customizable products are available upon request. Lead-free and RoHS compliant.
  • Description

    RFHIC’s RRP54591K2-42 is a 1200 W GaN module amplifier designed for radar systems applications. Operating from 5400 to 5900 MHz, the RRP54591K2-42 achieves 42 dB of gain with an efficiency ...

    Frequency
    5,400 ~ 5,900MHz
    Output Power
    1,200.0W
    Gain
    42dB
    Efficiency
    30%
    StatusSample available
    Freq. (MHz)5,400 ~ 5,900
    Gain (dB)42
    RFHIC's RRP54591K2-42 is a 1200 W GaN module amplifier designed for radar systems applications. Operating from 5400 to 5900 MHz, the RRP54591K2-42 achieves 42 dB of gain with an efficiency of 30%. The RRP54591K2-42 utilizes our in-house GaN on SiC technology, resulting in higher breakdown voltage, wider bandwidth, and higher efficiency. Both RF ports have integrated DC blocking capacitors and are fully matched to 50 Ohms. Customizable products are available upon request. Lead-free and RoHS compliant.
  • Description

    RFHIC’s RRP56571K0-42 is a 1200 W GaN module amplifier designed for radar systems applications. Operating from 5600 to 5700 MHz, the RRP56571K0-42 achieves 42 dB of gain with an efficiency ...

    Frequency
    5,600 ~ 5,700MHz
    Output Power
    1,200.0W
    Gain
    42dB
    Efficiency
    35%
    StatusSample available
    Freq. (MHz)5,600 ~ 5,700
    Gain (dB)42
    RFHIC's RRP56571K0-42 is a 1200 W GaN module amplifier designed for radar systems applications. Operating from 5600 to 5700 MHz, the RRP56571K0-42 achieves 42 dB of gain with an efficiency of 35%. The RRP56571K0-42 utilizes our in-house GaN on SiC technology, resulting in higher breakdown voltage, wider bandwidth, and higher efficiency. Both RF ports have integrated DC blocking capacitors and are fully matched to 50 Ohms. Customizable products are available upon request. Lead-free and RoHS compliant.
  • RRP52571K0-41

    Module Amplifiers

    RRP52571K0-41

    Description

    RFHIC’s RRP52571K0-41 is a 1200 W GaN module amplifier designed for radar systems applications. Operating from 5250 to 5750 MHz, the RRP52571K0-41 achieves 41 dB of gain with an efficiency ...

    Frequency
    5,250 ~ 5,750MHz
    Output Power
    1,200.0W
    Gain
    41dB
    Efficiency
    30%
    StatusSample available
    Freq. (MHz)5,250 ~ 5,750
    Gain (dB)41
    RFHIC's RRP52571K0-41 is a 1200 W GaN module amplifier designed for radar systems applications. Operating from 5250 to 5750 MHz, the RRP52571K0-41 achieves 41 dB of gain with an efficiency of 30%. The RRP52571K0-41 utilizes our in-house GaN on SiC technology, resulting in higher breakdown voltage, wider bandwidth, and higher efficiency. Both RF ports have integrated DC blocking capacitors and are fully matched to 50 Ohms. Customizable products are available upon request. Lead-free and RoHS compliant.
  • Description

    RFHIC’s RRP131K0-10 is a 1200 W GaN module amplifier designed for radar systems applications. Operating from 1200 to 1400 MHz, the RRP131K0-10 achieves 54 dB of gain with an efficiency ...

    Frequency
    1,200 ~ 1,400MHz
    Output Power
    1,200.0W
    Gain
    54dB
    Efficiency
    50%
    StatusProduction
    Freq. (MHz)1,200 ~ 1,400
    Gain (dB)54
    RFHIC's RRP131K0-10 is a 1200 W GaN module amplifier designed for radar systems applications. Operating from 1200 to 1400 MHz, the RRP131K0-10 achieves 54 dB of gain with an efficiency of 50%. The RRP131K0-10 utilizes our in-house GaN on SiC technology, resulting in higher breakdown voltage, wider bandwidth, and higher efficiency. Both RF ports have integrated DC blocking capacitors and are fully matched to 50 Ohms. Customizable products are available upon request. Lead-free and RoHS compliant.
  • Description

    RFHIC’s RRP5657550-35 is a 630 W GaN module amplifier designed for radar systems applications. Operating from 5600 to 5700 MHz, the RRP5657550-35 achieves 35 dB of gain with an efficiency ...

    Frequency
    5,600 ~ 5,700MHz
    Output Power
    630.0W
    Gain
    35dB
    Efficiency
    30%
    StatusObsolete
    Freq. (MHz)5,600 ~ 5,700
    Gain (dB)35
    RFHIC's RRP5657550-35 is a 630 W GaN module amplifier designed for radar systems applications. Operating from 5600 to 5700 MHz, the RRP5657550-35 achieves 35 dB of gain with an efficiency of 30%. The RRP5657550-35 utilizes our in-house GaN on SiC technology, resulting in higher breakdown voltage, wider bandwidth, and higher efficiency. Both RF ports have integrated DC blocking capacitors and are fully matched to 50 Ohms. Customizable products are available upon request. Lead-free and RoHS compliant.
  • Description

    RFHIC’s RRP162168100-08A is a 100 W GaN module amplifier designed for radar systems applications. Operating from 16200 to 16800 MHz, the RRP162168100-08A achieves 8 dB of gain with an efficiency ...

    Frequency
    16,200 ~ 16,800MHz
    Output Power
    100.0W
    Gain
    8dB
    Efficiency
    20%
    StatusProduction
    Freq. (MHz)16,200 ~ 16,800
    Gain (dB)8
    RFHIC's RRP162168100-08A is a 100 W GaN module amplifier designed for radar systems applications. Operating from 16200 to 16800 MHz, the RRP162168100-08A achieves 8 dB of gain with an efficiency of 20%. The RRP162168100-08A utilizes our in-house GaN on SiC technology, resulting in higher breakdown voltage, wider bandwidth, and higher efficiency. Both RF ports have integrated DC blocking capacitors and are fully matched to 50 Ohms. Customizable products are available upon request. Lead-free and RoHS compliant.
  • Description

    RFHIC’s RRP03250-10 is a 300 W GaN module amplifier designed for radar systems applications. Operating from 135 to 460 MHz, the RRP03250-10 achieves 31 dB of gain with an efficiency ...

    Frequency
    135 ~ 460MHz
    Output Power
    300.0W
    Gain
    31dB
    Efficiency
    45%
    StatusProduction
    Freq. (MHz)135 ~ 460
    Gain (dB)31
    RFHIC's RRP03250-10 is a 300 W GaN module amplifier designed for radar systems applications. Operating from 135 to 460 MHz, the RRP03250-10 achieves 31 dB of gain with an efficiency of 45%. The RRP03250-10 utilizes our in-house GaN on SiC technology, resulting in higher breakdown voltage, wider bandwidth, and higher efficiency. Both RF ports have integrated DC blocking capacitors and are fully matched to 50 Ohms. Customizable products are available upon request. Lead-free and RoHS compliant.
  • Description

    The RRP52571K3-43 is designed for Radar system application frequencies from 5.2 ~ 5.7GHz.
    This module uses GaN HEMT technology which performs high breakdown voltage, wide bandwidth and high efficiency.

    ...
    Frequency
    5,200 ~ 5,700MHz
    Output Power
    1,300.0W
    Gain
    43dB
    Efficiency
    35%
    StatusProduction
    Freq. (MHz)5,200 ~ 5,700
    Gain (dB)43
    The RRP52571K3-43 is designed for Radar system application frequencies from 5.2 ~ 5.7GHz. This module uses GaN HEMT technology which performs high breakdown voltage, wide bandwidth and high efficiency.
  • Category