RFHIC’s RWM03125-20 is a GaN on SiC wideband amplifier suited for communication and RF amplifier system applications. Covering from 50 to 520 MHz, the RWM03125-20 yields a small signal gain of 55 dB with 51 dBm at P3dB peak. The RWM03125-20 is designed using RFHIC’s GaN on SiC HEMT on copper sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched and includes thermal overload and input power over drive protection.

Lead-free and RoHS compliant.