RF Power Transistors

RFHIC offers a broad portfolio of gallium nitride (GaN) on silicon carbide (SiC) discrete transistors in various power levels, frequency ranges, and voltages. We offer both standardized and custom solutions,

RFHIC offers a broad portfolio of gallium nitride (GaN) on silicon carbide (SiC) discrete transistors in various power levels, frequency ranges, and voltages. We offer both standardized and custom solutions, packaged in our highest quality ceramic packages. Our world renowned GaN transistors provide users with unbeatable performance all built by our industry leading reliability.

RFHIC offers a broad portfolio of gallium nitride (GaN) on silicon carbide (SiC) discrete transistors in various power levels, frequency ranges, and voltages. We offer both standardized and custom solutions,

RFHIC offers a broad portfolio of gallium nitride (GaN) on silicon carbide (SiC) discrete transistors in various power levels, frequency ranges, and voltages. We offer both standardized and custom solutions, packaged in our highest quality ceramic packages. Our world renowned GaN transistors provide users with unbeatable performance all built by our industry leading reliability.

  • IE18165P

    GaN on SiC Transistors

    IE18165P

    Description

    RFHIC’s IE18165P is a discrete GaN on SiC HEMT which operates from 1805 to 1880 MHz. The IE18165P delivers 165 W of saturated power at 48V with a drain efficiency ...

    Frequency
    1805 ~ 1880MHz
    Output Power
    37W
    Gain
    18.3dB
    Efficiency
    77%%
    StatusProduction
    Freq. (MHz)1805 ~ 1880
    Pout (W)
    Gain (dB)18.3
  • IE18085P

    GaN on SiC Transistors

    IE18085P

    Description

    RFHIC’s IE18085P is a discrete GaN on SiC HEMT which operates from 1805 to 1880 MHz. The IE18085P delivers 85 W of saturated power at 48V with a drain efficiency ...

    Frequency
    1805 ~ 1880MHz
    Output Power
    19W
    Gain
    18.9dB
    Efficiency
    72%%
    StatusProduction
    Freq. (MHz)1805 ~ 1880
    Pout (W)
    Gain (dB)18.9
  • IE08220P

    GaN on SiC Transistors

    IE08220P

    Description

    RFHIC’s IE08220P is a discrete GaN on SiC HEMT which operates from 758 to 858 MHz. The IE08220P delivers 220 W of saturated power at 48V with a drain efficiency ...

    Frequency
    758 ~ 858MHz
    Output Power
    50W
    Gain
    22dB
    Efficiency
    75%%
    StatusProduction
    Freq. (MHz)758 ~ 858
    Pout (W)
    Gain (dB)22
  • IE08165P

    GaN on SiC Transistors

    IE08165P

    Description

    RFHIC’s IE08165P is a discrete GaN on SiC HEMT which operates from 770 to 900 MHz. The IE08165P delivers 165 W of saturated power at 48V with a drain efficiency ...

    Frequency
    770 ~ 900MHz
    Output Power
    37W
    Gain
    20.9dB
    Efficiency
    77%%
    StatusProduction
    Freq. (MHz)770 ~ 900
    Pout (W)
    Gain (dB)20.9
  • RT12014P

    GaN on SiC Transistors

    RT12014P

    Description

    RFHIC’s RT12014P is a discrete GaN on SiC HEMT which operates from 0 to 6000 MHz. The RT12014P delivers 14 W of saturated power at 48V with a drain efficiency ...

    Frequency
    0 ~ 6000MHz
    Output Power
    3.2W
    Gain
    17.5dB
    Efficiency
    60%%
    StatusProduction
    Freq. (MHz)0 ~ 6000
    Pout (W)
    Gain (dB)17.5
  • RT12028P

    GaN on SiC Transistors

    RT12028P

    Description

    RFHIC’s RT12028P is a discrete GaN on SiC HEMT which operates from 0 to 6000 MHz. The RT12028P delivers 28 W of saturated power at 48V with a drain efficiency ...

    Frequency
    0 ~ 6000MHz
    Output Power
    6.3W
    Gain
    17.6dB
    Efficiency
    60%%
    StatusProduction
    Freq. (MHz)0 ~ 6000
    Pout (W)
    Gain (dB)17.6
  • RT12055P

    GaN on SiC Transistors

    RT12055P

    Description

    RFHIC’s RT12055P is a discrete GaN on SiC HEMT which operates from 0 to 6000 MHz. The RT12055P delivers 55 W of saturated power at 48V with a drain efficiency ...

    Frequency
    0 ~ 6000MHz
    Output Power
    12.6W
    Gain
    15.7dB
    Efficiency
    60%%
    StatusProduction
    Freq. (MHz)0 ~ 6000
    Pout (W)
    Gain (dB)15.7
  • ETQ2014P

    GaN on SiC Transistors

    ETQ2014P

    Description

    RFHIC’s ETQ2014P is a discrete GaN on SiC HEMT which operates up to 6000 MHz. The ETQ2014P delivers 14 W of saturated power at 48V with a drain efficiency of ...

    Frequency
    0 ~ 6000MHz
    Output Power
    3.2W
    Gain
    18.5dB
    Efficiency
    60%%
    StatusProduction
    Freq. (MHz)0 ~ 6000
    Pout (W)
    Gain (dB)18.5
  • ETQ2028P

    GaN on SiC Transistors

    ETQ2028P

    Description

    RFHIC’s ETQ2028P is a discrete GaN on SiC HEMT which operates up to 6000 MHz. The ETQ2028P delivers 28 W of saturated power at 48V with a drain efficiency of ...

    Frequency
    0 ~ 6000MHz
    Output Power
    6.3W
    Gain
    18.7dB
    Efficiency
    60%%
    StatusProduction
    Freq. (MHz)0 ~ 6000
    Pout (W)
    Gain (dB)18.7
  • DT12060P

    GaN on SiC Transistors

    DT12060P

    Description

    RFHIC’s DT12060P is a discrete GaN on SiC HEMT which operates up to 6000 MHz. The DT12060P delivers 60 W of saturated power at 48V with a drain efficiency of ...

    Frequency
    0 ~ 6000MHz
    Output Power
    14.1W
    Gain
    17dB
    Efficiency
    70%%
    StatusProduction
    Freq. (MHz)0 ~ 6000
    Pout (W)
    Gain (dB)17
  • IE36170WD

    GaN on SiC Transistors

    IE36170WD

    Description

    RFHIC’s IE36170WD is a discrete GaN on SiC HEMT which operates from 3520 to 3560 MHz. The IE36170WD delivers 170 W of saturated power at 48V with a drain efficiency ...

    Frequency
    3520 ~ 3560MHz
    Output Power
    32W
    Gain
    14.6dB
    StatusProduction
    Freq. (MHz)3520 ~ 3560
    Pout (W)
    Gain (dB)14.6
  • IE36110W

    GaN on SiC Transistors

    IE36110W

    Description

    RFHIC’s IE36110W is a discrete GaN on SiC HEMT which operates from 3400 to 3600 MHz. The IE36110W delivers 110 W of saturated power at 48V with a drain efficiency ...

    Frequency
    3400 ~ 3600MHz
    Output Power
    25W
    Gain
    17.1dB
    Efficiency
    65%
    StatusProduction
    Freq. (MHz)3400 ~ 3600
    Pout (W)
    Gain (dB)17.1
  • IE27385D

    GaN on SiC Transistors

    IE27385D

    Description

    RFHIC’s IE27385D is a discrete GaN on SiC HEMT which operates from 2620 to 2690 MHz. The IE27385D delivers 389 W of saturated power at 48V with a drain efficiency ...

    Frequency
    2620 ~ 2690MHz
    Output Power
    69W
    Gain
    13.8dB
    StatusProduction
    Freq. (MHz)2620 ~ 2690
    Pout (W)
    Gain (dB)13.8
  • IE36085W

    GaN on SiC Transistors

    IE36085W

    Description

    RFHIC’s IE36085W is a discrete GaN on SiC HEMT which operates from 3400 to 3600 MHz. The IE36085W delivers 85 W of saturated power at 48V with a drain efficiency ...

    Frequency
    3400 ~ 3600MHz
    Output Power
    19W
    Gain
    17.3dB
    Efficiency
    68%
    StatusProduction
    Freq. (MHz)3400 ~ 3600
    Pout (W)
    Gain (dB)17.3
  • IE27330D

    GaN on SiC Transistors

    IE27330D

    Description

    RFHIC’s IE27330D is a discrete GaN on SiC HEMT which operates from 2620 to 2690 MHz. The IE27330D delivers 330 W of saturated power at 48V with a drain efficiency ...

    Frequency
    2620 ~ 2690MHz
    Output Power
    63W
    Gain
    14.2dB
    StatusProduction
    Freq. (MHz)2620 ~ 2690
    Pout (W)
    Gain (dB)14.2
  • IE27275D

    GaN on SiC Transistors

    IE27275D

    Description

    RFHIC’s IE27275D is a discrete GaN on SiC HEMT which operates from 2575 to 2635 MHz. The IE27275D delivers 275 W of saturated power at 48V with a drain efficiency ...

    Frequency
    2575 ~ 2635MHz
    Output Power
    50W
    Gain
    14.1dB
    StatusProduction
    Freq. (MHz)2575 ~ 2635
    Pout (W)
    Gain (dB)14.1
  • IE27330P

    GaN on SiC Transistors

    IE27330P

    Description

    RFHIC’s IE27330P is a discrete GaN on SiC HEMT which operates from 2620 to 2690 MHz. The IE27330P delivers 330 W of saturated power at 48V with a drain efficiency ...

    Frequency
    2620 ~ 2690MHz
    Output Power
    79W
    Gain
    15.4dB
    Efficiency
    70%
    StatusProduction
    Freq. (MHz)2620 ~ 2690
    Pout (W)
    Gain (dB)15.4
  • IE27220PE

    GaN on SiC Transistors

    IE27220PE

    Description

    RFHIC’s IE27220PE is a discrete GaN on SiC HEMT which operates from 2620 to 2690 MHz. The IE27220PE delivers 220 W of saturated power at 48V with a drain efficiency ...

    Frequency
    2620 ~ 2690MHz
    Output Power
    50W
    Gain
    17dB
    Efficiency
    75%
    StatusProduction
    Freq. (MHz)2620 ~ 2690
    Pout (W)
    Gain (dB)17
  • IE27165PE

    GaN on SiC Transistors

    IE27165PE

    Description

    RFHIC’s IE27165PE is a discrete GaN on SiC HEMT which operates from 2620 to 2690 MHz. The IE27165PE delivers 165 W of saturated power at 48V with a drain efficiency ...

    Frequency
    2620 ~ 2690MHz
    Output Power
    40W
    Gain
    16.9dB
    Efficiency
    75%
    StatusProduction
    Freq. (MHz)2620 ~ 2690
    Pout (W)
    Gain (dB)16.9
  • IE26195WD

    GaN on SiC Transistors

    IE26195WD

    Description

    RFHIC’s IE26195WD is a discrete GaN on SiC HEMT which operates from 2575 to 2635 MHz. The IE26195WD delivers 195 W of saturated power at 48V with a drain efficiency ...

    Frequency
    2575 ~ 2635MHz
    Output Power
    32W
    Gain
    14.4dB
    Efficiency
    75%
    StatusProduction
    Freq. (MHz)2575 ~ 2635
    Pout (W)
    Gain (dB)14.4
  • IE26110P

    GaN on SiC Transistors

    IE26110P

    Description

    RFHIC’s IE26110P is a discrete GaN on SiC HEMT which operates from 2500 to 2690 MHz. The IE26110P delivers 110 W of saturated power at 48V with a drain efficiency ...

    Frequency
    2500 ~ 2690MHz
    Output Power
    25W
    Gain
    19.1dB
    Efficiency
    72%
    StatusProduction
    Freq. (MHz)2500 ~ 2690
    Pout (W)
    Gain (dB)19.1
  • IE26085P

    GaN on SiC Transistors

    IE26085P

    Description

    RFHIC’s IE26085P is a discrete GaN on SiC HEMT which operates from 2496 to 2690 MHz. The IE26085P delivers 85 W of saturated power at 48V with a drain efficiency ...

    Frequency
    2496 ~ 2690MHz
    Output Power
    19W
    Gain
    20.2dB
    Efficiency
    70%
    StatusProduction
    Freq. (MHz)2496 ~ 2690
    Pout (W)
    Gain (dB)20.2
  • IE23195WD

    GaN on SiC Transistors

    IE23195WD

    Description

    RFHIC’s IE23195WD is a discrete GaN on SiC HEMT which operates from 2300 to 2400 MHz. The IE23195WD delivers 195 W of saturated power at 48V with a drain efficiency ...

    Frequency
    2300 ~ 2400MHz
    Output Power
    32W
    Gain
    15.3dB
    Efficiency
    72%
    StatusProduction
    Freq. (MHz)2300 ~ 2400
    Pout (W)
    Gain (dB)15.3
  • IE21385D

    GaN on SiC Transistors

    IE21385D

    Description

    RFHIC’s IE21385D is a discrete GaN on SiC HEMT which operates from 2110 to 2170 MHz. The IE21385D delivers 385 W of saturated power at 48V with a drain efficiency ...

    Frequency
    2110 ~ 2170MHz
    Output Power
    63W
    Gain
    14.6dB
    Efficiency
    55%
    StatusProduction
    Freq. (MHz)2110 ~ 2170
    Pout (W)
    Gain (dB)14.6
  • IE21330P

    GaN on SiC Transistors

    IE21330P

    Description

    RFHIC’s IE21330P is a discrete GaN on SiC HEMT which operates from 2110 to 2170 MHz. The IE21330P delivers 330 W of saturated power at 48V with a drain efficiency ...

    Frequency
    2110 ~ 2170MHz
    Output Power
    79W
    Gain
    15.6dB
    Efficiency
    75%
    StatusProduction
    Freq. (MHz)2110 ~ 2170
    Pout (W)
    Gain (dB)15.6
  • IE21220P

    GaN on SiC Transistors

    IE21220P

    Description

    RFHIC’s IE21220P is a discrete GaN on SiC HEMT which operates from 2110 to 2170 MHz. The IE21220P delivers 220 W of saturated power at 48V with a drain efficiency ...

    Frequency
    2110 ~ 2170MHz
    Output Power
    50W
    Gain
    17.4dB
    Efficiency
    75%
    StatusProduction
    Freq. (MHz)2110 ~ 2170
    Pout (W)
    Gain (dB)17.4
  • IE21165PE

    GaN on SiC Transistors

    IE21165PE

    Description

    RFHIC’s IE21165PE is a discrete GaN on SiC HEMT which operates from 2110 to 2170 MHz. The IE21165PE delivers 165 W of saturated power at 48V with a drain efficiency ...

    Frequency
    2110 ~ 2170MHz
    Output Power
    37W
    Gain
    17.5dB
    Efficiency
    72%
    StatusProduction
    Freq. (MHz)2110 ~ 2170
    Pout (W)
    Gain (dB)17.5
  • IE21110P

    GaN on SiC Transistors

    IE21110P

    Description

    RFHIC’s IE21110P is a discrete GaN on SiC HEMT which operates from 2110 to 2170 MHz. The IE21110P delivers 110 W of saturated power at 48V with a drain efficiency ...

    Frequency
    2110 ~ 2170MHz
    Output Power
    25W
    Gain
    18.4dB
    Efficiency
    74%
    StatusProduction
    Freq. (MHz)2110 ~ 2170
    Pout (W)
    Gain (dB)18.4
  • IE21085P

    GaN on SiC Transistors

    IE21085P

    Description

    RFHIC’s IE21085P is a discrete GaN on SiC HEMT which operates from 2110 to 2170 MHz. The IE21085P delivers 85 W of saturated power at 48V with a drain efficiency ...

    Frequency
    2110 ~ 2170MHz
    Output Power
    19W
    Gain
    20.7dB
    Efficiency
    75%
    StatusProduction
    Freq. (MHz)2110 ~ 2170
    Pout (W)
    Gain (dB)20.7
  • IE19195WD

    GaN on SiC Transistors

    IE19195WD

    Description

    RFHIC’s IE19195WD is a discrete GaN on SiC HEMT which operates from 1880 to 2025 MHz. The IE19195WD delivers 195 W of saturated power at 48V with a drain efficiency ...

    Frequency
    1880 ~ 2025MHz
    Output Power
    32W
    Gain
    16.9dB
    StatusProduction
    Freq. (MHz)1880 ~ 2025
    Pout (W)
    Gain (dB)16.9
  • IE18330D

    GaN on SiC Transistors

    IE18330D

    Description

    RFHIC’s IE18330D is a discrete GaN on SiC HEMT which operates from 1805 to 1880 MHz. The IE18330D delivers 330 W of saturated power at 48V with a drain efficiency ...

    Frequency
    1805 ~ 1880MHz
    Output Power
    63W
    Gain
    15.5dB
    StatusProduction
    Freq. (MHz)1805 ~ 1880
    Pout (W)
    Gain (dB)15.5
  • IE18330PG

    GaN on SiC Transistors

    IE18330PG

    Description

    RFHIC’s IE18330PG is a discrete GaN on SiC HEMT which operates from 1805 to 1880 MHz. The IE18330PG delivers 330 W of saturated power at 48V with a drain efficiency ...

    Frequency
    1805 ~ 1880MHz
    Output Power
    74W
    Gain
    15.8dB
    Efficiency
    72%
    StatusProduction
    Freq. (MHz)1805 ~ 1880
    Pout (W)
    Gain (dB)15.8
  • IE18250D

    GaN on SiC Transistors

    IE18250D

    Description

    RFHIC’s IE18250D is a discrete GaN on SiC HEMT which operates from 1805 to 1880 MHz. The IE18250D delivers 250 W of saturated power at 48V with a drain efficiency ...

    Frequency
    1805 ~ 1880MHz
    Output Power
    45W
    Gain
    16.7dB
    StatusProduction
    Freq. (MHz)1805 ~ 1880
    Pout (W)
    Gain (dB)16.7
  • IE18220PG

    GaN on SiC Transistors

    IE18220PG

    Description

    RFHIC’s IE18220PG is a discrete GaN on SiC HEMT which operates from 1805 to 1880 MHz. The IE18220PG delivers 220 W of saturated power at 48V with a drain efficiency ...

    Frequency
    1805 ~ 1880MHz
    Output Power
    50W
    Gain
    18.1dB
    Efficiency
    71%
    StatusProduction
    Freq. (MHz)1805 ~ 1880
    Pout (W)
    Gain (dB)18.1
  • IE36220W

    GaN on SiC Transistors

    IE36220W

    Description

    RFHIC’s IE36220W is a discrete GaN on SiC HEMT which operates from 3480 to 3520 MHz. The IE36220W delivers 220 W of saturated power at 48V with a drain efficiency ...

    Frequency
    3480 ~ 3520MHz
    Output Power
    50W
    Gain
    14.7dB
    Efficiency
    64%
    StatusProduction
    Freq. (MHz)3480 ~ 3520
    Gain (dB)14.7
  • IE24300P

    GaN on SiC Transistors

    IE24300P

    Description

    RFHIC’s IE24300P is a 300W GaN on SiC transistor designed ideally for industrial heating, drying, and plasma lighting applications. Operating from 2400 to 2500 MHz, the IE24300P provides a high ...

    Frequency
    2400 ~ 2500MHz
    Output Power
    300W
    Gain
    11.4dB
    Efficiency
    70%
    StatusProduction
    Freq. (MHz)2400 ~ 2500
    Pout (W)
    Gain (dB)11.4
  • IE24200P

    GaN on SiC Transistors

    IE24200P

    Description

    RFHIC’s IE24200P is a 200W GaN on SiC transistor designed ideally for industrial heating, drying, and plasma lighting applications. Operating from 2400 to 2500 MHz, the IE24200P provides a high ...

    Frequency
    2400 ~ 2500MHz
    Output Power
    200W
    Gain
    131dB
    Efficiency
    74%
    StatusProduction
    Freq. (MHz)2400 ~ 2500
    Pout (W)
    Gain (dB)131
  • IE24150P

    GaN on SiC Transistors

    IE24150P

    Description

    RFHIC’s IE24150P is a 150W GaN on SiC transistor designed ideally for industrial heating, scientific, and medical (ISM) applications. Operating from 2400 to 2500 MHz, the IE24150P provides a high ...

    Frequency
    2400 ~ 2500MHz
    Output Power
    150W
    Gain
    12.5dB
    Efficiency
    72%
    StatusProduction
    Freq. (MHz)2400 ~ 2500
    Pout (W)
    Gain (dB)12.5
  • IE24100P

    GaN on SiC Transistors

    IE24100P

    Description

    RFHIC’s IE24100P is a 100W GaN on SiC transistor fabricated with RFHIC’s GaN on SiC technology. Operating from 2400 to 2500 MHz, the IE24100P provides a high gain of 14.6dB ...

    Frequency
    2400 ~ 2500MHz
    Output Power
    100W
    Gain
    14.6dB
    Efficiency
    71%
    StatusProduction
    Freq. (MHz)2400 ~ 2500
    Pout (W)
    Gain (dB)14.6
  • IE13550D

    GaN on SiC Transistors

    IE13550D

    Description

    RFHIC’s IE13550D is a 550W GaN on SiC transistor designed ideally for particle accelerators (LINAC) and microwave energy applications. Operating from 1295 to 1305 MHz, the IE13550D provides a high ...

    Frequency
    1295 ~ 1305MHz
    Output Power
    550W
    Gain
    15dB
    Efficiency
    79%
    StatusSample available
    Freq. (MHz)1295 ~ 1305
    Pout (W)
    Gain (dB)15
  • IE09300PC

    GaN on SiC Transistors

    IE09300PC

    Description

    RFHIC’s IE09300PC is a 300W GaN on SiC transistor ideally suited for industrial heating, drying, and plasma lighting applications. Operating from 900 to 930 MHz, the IE09300PC provides a high ...

    Frequency
    900 ~ 930MHz
    Output Power
    300W
    Gain
    17.5dB
    Efficiency
    80%
    StatusProduction
    Freq. (MHz)900 ~ 930
    Pout (W)
    Gain (dB)17.5
  • IE09150PC

    GaN on SiC Transistors

    IE09150PC

    Description

    RFHIC’s IE09150PC is a 150W continuous-wave GaN on SiC transistor. Operating from 900 to 930 MHz, the IE09150PC provides a high gain of 17.6dB with an 82.5% drain efficiency at ...

    Frequency
    900 ~ 930MHz
    Output Power
    150W
    Gain
    17.6dB
    Efficiency
    82.5%
    StatusProduction
    Freq. (MHz)900 ~ 930
    Pout (W)
    Gain (dB)17.6
  • ET43014P

    GaN on SiC Transistors

    ET43014P

    Description

    RFHIC’s ET43014P is a 14W GaN on SiC drive transistor designed ideally for industrial heating/drying, medical and plasma lighting applications. Operable within DC to 6000 MHz, the ET43014P provides a ...

    Frequency
    0 ~ 6000MHz
    Output Power
    14W
    Gain
    15.5dB
    Efficiency
    64%
    StatusProduction
    Freq. (MHz)0 ~ 6000
    Pout (W)
    Gain (dB)15.5
  • ET43028P

    GaN on SiC Transistors

    ET43028P

    Description

    RFHIC’s ET43028P is a 28W GaN on SiC drive transistor designed ideally for industrial heating, drying, and plasma lighting applications. Operable within DC to 6000 MHz, the ET43028P provides a ...

    Frequency
    0 ~ 6000MHz
    Output Power
    28W
    Gain
    15.2dB
    Efficiency
    67%
    StatusProduction
    Freq. (MHz)0 ~ 6000
    Pout (W)
    Gain (dB)15.2
  • ET43055P

    GaN on SiC Transistors

    ET43055P

    Description

    RFHIC’s ET43055P is a 55W GaN on SiC drive transistor designed ideally for industrial, scientific, and medical (ISM) applications. Operable from DC to 6000 MHz, the ET43055P provides a high ...

    Frequency
    0 ~ 6000MHz
    Output Power
    55W
    Gain
    13.4dB
    Efficiency
    71%
    StatusProduction
    Freq. (MHz)0 ~ 6000
    Pout (W)
    Gain (dB)13.4
  • Category