GaN on SiC Transistors

RFHIC’s leading-edge GaN on SiC transistors are solving the power challenges of today’s most demanding industries. It’s unbeatable compact size, high- efficiency, power and wide frequency ranges –  only available

RFHIC’s leading-edge GaN on SiC transistors are solving the power challenges of today’s most demanding industries. It’s unbeatable compact size, high- efficiency, power and wide frequency ranges –  only available from RFHIC.

RFHIC’s leading-edge GaN on SiC transistors are solving the power challenges of today’s most demanding industries. It’s unbeatable compact size, high- efficiency, power and wide frequency ranges –  only available

RFHIC’s leading-edge GaN on SiC transistors are solving the power challenges of today’s most demanding industries. It’s unbeatable compact size, high- efficiency, power and wide frequency ranges –  only available from RFHIC.

  • IE18165P

    GaN on SiC Transistors

    IE18165P

    Description

    RFHIC’s IE18165P is a discrete GaN on SiC HEMT which operates from 1805 to 1880 MHz. The IE18165P delivers 165 W of saturated power at 48V with a drain efficiency ...

    Frequency
    1805 ~ 1880MHz
    Output Power
    37W
    Gain
    18.3dB
    Efficiency
    77%%
    StatusProduction
    Freq. (MHz)1805 ~ 1880
    Pout (W)
    Gain (dB)18.3
  • IE18085P

    GaN on SiC Transistors

    IE18085P

    Description

    RFHIC’s IE18085P is a discrete GaN on SiC HEMT which operates from 1805 to 1880 MHz. The IE18085P delivers 85 W of saturated power at 48V with a drain efficiency ...

    Frequency
    1805 ~ 1880MHz
    Output Power
    19W
    Gain
    18.9dB
    Efficiency
    72%%
    StatusProduction
    Freq. (MHz)1805 ~ 1880
    Pout (W)
    Gain (dB)18.9
  • IE08220P

    GaN on SiC Transistors

    IE08220P

    Description

    RFHIC’s IE08220P is a discrete GaN on SiC HEMT which operates from 758 to 858 MHz. The IE08220P delivers 220 W of saturated power at 48V with a drain efficiency ...

    Frequency
    758 ~ 858MHz
    Output Power
    50W
    Gain
    22dB
    Efficiency
    75%%
    StatusProduction
    Freq. (MHz)758 ~ 858
    Pout (W)
    Gain (dB)22
  • IE08165P

    GaN on SiC Transistors

    IE08165P

    Description

    RFHIC’s IE08165P is a discrete GaN on SiC HEMT which operates from 770 to 900 MHz. The IE08165P delivers 165 W of saturated power at 48V with a drain efficiency ...

    Frequency
    770 ~ 900MHz
    Output Power
    37W
    Gain
    20.9dB
    Efficiency
    77%%
    StatusProduction
    Freq. (MHz)770 ~ 900
    Pout (W)
    Gain (dB)20.9
  • RT12014P

    GaN on SiC Transistors

    RT12014P

    Description

    RFHIC’s RT12014P is a discrete GaN on SiC HEMT which operates from 0 to 6000 MHz. The RT12014P delivers 14 W of saturated power at 48V with a drain efficiency ...

    Frequency
    0 ~ 6000MHz
    Output Power
    3.2W
    Gain
    17.5dB
    Efficiency
    60%%
    StatusProduction
    Freq. (MHz)0 ~ 6000
    Pout (W)
    Gain (dB)17.5
  • RT12028P

    GaN on SiC Transistors

    RT12028P

    Description

    RFHIC’s RT12028P is a discrete GaN on SiC HEMT which operates from 0 to 6000 MHz. The RT12028P delivers 28 W of saturated power at 48V with a drain efficiency ...

    Frequency
    0 ~ 6000MHz
    Output Power
    6.3W
    Gain
    17.6dB
    Efficiency
    60%%
    StatusProduction
    Freq. (MHz)0 ~ 6000
    Pout (W)
    Gain (dB)17.6
  • RT12055P

    GaN on SiC Transistors

    RT12055P

    Description

    RFHIC’s RT12055P is a discrete GaN on SiC HEMT which operates from 0 to 6000 MHz. The RT12055P delivers 55 W of saturated power at 48V with a drain efficiency ...

    Frequency
    0 ~ 6000MHz
    Output Power
    12.6W
    Gain
    15.7dB
    Efficiency
    60%%
    StatusProduction
    Freq. (MHz)0 ~ 6000
    Pout (W)
    Gain (dB)15.7
  • ETQ2014P

    GaN on SiC Transistors

    ETQ2014P

    Description

    RFHIC’s ETQ2014P is a discrete GaN on SiC HEMT which operates up to 6000 MHz. The ETQ2014P delivers 14 W of saturated power at 48V with a drain efficiency of ...

    Frequency
    0 ~ 6000MHz
    Output Power
    3.2W
    Gain
    18.5dB
    Efficiency
    60%%
    StatusProduction
    Freq. (MHz)0 ~ 6000
    Pout (W)
    Gain (dB)18.5
  • ETQ2028P

    GaN on SiC Transistors

    ETQ2028P

    Description

    RFHIC’s ETQ2028P is a discrete GaN on SiC HEMT which operates up to 6000 MHz. The ETQ2028P delivers 28 W of saturated power at 48V with a drain efficiency of ...

    Frequency
    0 ~ 6000MHz
    Output Power
    6.3W
    Gain
    18.7dB
    Efficiency
    60%%
    StatusProduction
    Freq. (MHz)0 ~ 6000
    Pout (W)
    Gain (dB)18.7
  • DT12060P

    GaN on SiC Transistors

    DT12060P

    Description

    RFHIC’s DT12060P is a discrete GaN on SiC HEMT which operates up to 6000 MHz. The DT12060P delivers 60 W of saturated power at 48V with a drain efficiency of ...

    Frequency
    0 ~ 6000MHz
    Output Power
    14.1W
    Gain
    17dB
    Efficiency
    70%%
    StatusProduction
    Freq. (MHz)0 ~ 6000
    Pout (W)
    Gain (dB)17
  • IE36170WD

    GaN on SiC Transistors

    IE36170WD

    Description

    RFHIC’s IE36170WD is a discrete GaN on SiC HEMT which operates from 3520 to 3560 MHz. The IE36170WD delivers 170 W of saturated power at 48V with a drain efficiency ...

    Frequency
    3520 ~ 3560MHz
    Output Power
    32W
    Gain
    14.6dB
    StatusProduction
    Freq. (MHz)3520 ~ 3560
    Pout (W)
    Gain (dB)14.6
  • IE36110W

    GaN on SiC Transistors

    IE36110W

    Description

    RFHIC’s IE36110W is a discrete GaN on SiC HEMT which operates from 3400 to 3600 MHz. The IE36110W delivers 110 W of saturated power at 48V with a drain efficiency ...

    Frequency
    3400 ~ 3600MHz
    Output Power
    25W
    Gain
    17.1dB
    Efficiency
    65%
    StatusProduction
    Freq. (MHz)3400 ~ 3600
    Pout (W)
    Gain (dB)17.1
  • IE27385D

    GaN on SiC Transistors

    IE27385D

    Description

    RFHIC’s IE27385D is a discrete GaN on SiC HEMT which operates from 2620 to 2690 MHz. The IE27385D delivers 389 W of saturated power at 48V with a drain efficiency ...

    Frequency
    2620 ~ 2690MHz
    Output Power
    69W
    Gain
    13.8dB
    StatusProduction
    Freq. (MHz)2620 ~ 2690
    Pout (W)
    Gain (dB)13.8
  • IE36085W

    GaN on SiC Transistors

    IE36085W

    Description

    RFHIC’s IE36085W is a discrete GaN on SiC HEMT which operates from 3400 to 3600 MHz. The IE36085W delivers 85 W of saturated power at 48V with a drain efficiency ...

    Frequency
    3400 ~ 3600MHz
    Output Power
    19W
    Gain
    17.3dB
    Efficiency
    68%
    StatusProduction
    Freq. (MHz)3400 ~ 3600
    Pout (W)
    Gain (dB)17.3
  • IE27330D

    GaN on SiC Transistors

    IE27330D

    Description

    RFHIC’s IE27330D is a discrete GaN on SiC HEMT which operates from 2620 to 2690 MHz. The IE27330D delivers 330 W of saturated power at 48V with a drain efficiency ...

    Frequency
    2620 ~ 2690MHz
    Output Power
    63W
    Gain
    14.2dB
    StatusProduction
    Freq. (MHz)2620 ~ 2690
    Pout (W)
    Gain (dB)14.2
  • IE27275D

    GaN on SiC Transistors

    IE27275D

    Description

    RFHIC’s IE27275D is a discrete GaN on SiC HEMT which operates from 2575 to 2635 MHz. The IE27275D delivers 275 W of saturated power at 48V with a drain efficiency ...

    Frequency
    2575 ~ 2635MHz
    Output Power
    50W
    Gain
    14.1dB
    StatusProduction
    Freq. (MHz)2575 ~ 2635
    Pout (W)
    Gain (dB)14.1
  • IE27330P

    GaN on SiC Transistors

    IE27330P

    Description

    RFHIC’s IE27330P is a discrete GaN on SiC HEMT which operates from 2620 to 2690 MHz. The IE27330P delivers 330 W of saturated power at 48V with a drain efficiency ...

    Frequency
    2620 ~ 2690MHz
    Output Power
    79W
    Gain
    15.4dB
    Efficiency
    70%
    StatusProduction
    Freq. (MHz)2620 ~ 2690
    Pout (W)
    Gain (dB)15.4
  • IE27220PE

    GaN on SiC Transistors

    IE27220PE

    Description

    RFHIC’s IE27220PE is a discrete GaN on SiC HEMT which operates from 2620 to 2690 MHz. The IE27220PE delivers 220 W of saturated power at 48V with a drain efficiency ...

    Frequency
    2620 ~ 2690MHz
    Output Power
    50W
    Gain
    17dB
    Efficiency
    75%
    StatusProduction
    Freq. (MHz)2620 ~ 2690
    Pout (W)
    Gain (dB)17
  • IE27165PE

    GaN on SiC Transistors

    IE27165PE

    Description

    RFHIC’s IE27165PE is a discrete GaN on SiC HEMT which operates from 2620 to 2690 MHz. The IE27165PE delivers 165 W of saturated power at 48V with a drain efficiency ...

    Frequency
    2620 ~ 2690MHz
    Output Power
    40W
    Gain
    16.9dB
    Efficiency
    75%
    StatusProduction
    Freq. (MHz)2620 ~ 2690
    Pout (W)
    Gain (dB)16.9
  • IE26195WD

    GaN on SiC Transistors

    IE26195WD

    Description

    RFHIC’s IE26195WD is a discrete GaN on SiC HEMT which operates from 2575 to 2635 MHz. The IE26195WD delivers 195 W of saturated power at 48V with a drain efficiency ...

    Frequency
    2575 ~ 2635MHz
    Output Power
    32W
    Gain
    14.4dB
    Efficiency
    75%
    StatusProduction
    Freq. (MHz)2575 ~ 2635
    Pout (W)
    Gain (dB)14.4
  • IE26110P

    GaN on SiC Transistors

    IE26110P

    Description

    RFHIC’s IE26110P is a discrete GaN on SiC HEMT which operates from 2500 to 2690 MHz. The IE26110P delivers 110 W of saturated power at 48V with a drain efficiency ...

    Frequency
    2500 ~ 2690MHz
    Output Power
    25W
    Gain
    19.1dB
    Efficiency
    72%
    StatusProduction
    Freq. (MHz)2500 ~ 2690
    Pout (W)
    Gain (dB)19.1
  • IE26085P

    GaN on SiC Transistors

    IE26085P

    Description

    RFHIC’s IE26085P is a discrete GaN on SiC HEMT which operates from 2496 to 2690 MHz. The IE26085P delivers 85 W of saturated power at 48V with a drain efficiency ...

    Frequency
    2496 ~ 2690MHz
    Output Power
    19W
    Gain
    20.2dB
    Efficiency
    70%
    StatusProduction
    Freq. (MHz)2496 ~ 2690
    Pout (W)
    Gain (dB)20.2
  • IE23195WD

    GaN on SiC Transistors

    IE23195WD

    Description

    RFHIC’s IE23195WD is a discrete GaN on SiC HEMT which operates from 2300 to 2400 MHz. The IE23195WD delivers 195 W of saturated power at 48V with a drain efficiency ...

    Frequency
    2300 ~ 2400MHz
    Output Power
    32W
    Gain
    15.3dB
    Efficiency
    72%
    StatusProduction
    Freq. (MHz)2300 ~ 2400
    Pout (W)
    Gain (dB)15.3
  • IE21385D

    GaN on SiC Transistors

    IE21385D

    Description

    RFHIC’s IE21385D is a discrete GaN on SiC HEMT which operates from 2110 to 2170 MHz. The IE21385D delivers 385 W of saturated power at 48V with a drain efficiency ...

    Frequency
    2110 ~ 2170MHz
    Output Power
    63W
    Gain
    14.6dB
    Efficiency
    55%
    StatusProduction
    Freq. (MHz)2110 ~ 2170
    Pout (W)
    Gain (dB)14.6
  • IE21330P

    GaN on SiC Transistors

    IE21330P

    Description

    RFHIC’s IE21330P is a discrete GaN on SiC HEMT which operates from 2110 to 2170 MHz. The IE21330P delivers 330 W of saturated power at 48V with a drain efficiency ...

    Frequency
    2110 ~ 2170MHz
    Output Power
    79W
    Gain
    15.6dB
    Efficiency
    75%
    StatusProduction
    Freq. (MHz)2110 ~ 2170
    Pout (W)
    Gain (dB)15.6
  • IE21220P

    GaN on SiC Transistors

    IE21220P

    Description

    RFHIC’s IE21220P is a discrete GaN on SiC HEMT which operates from 2110 to 2170 MHz. The IE21220P delivers 220 W of saturated power at 48V with a drain efficiency ...

    Frequency
    2110 ~ 2170MHz
    Output Power
    50W
    Gain
    17.4dB
    Efficiency
    75%
    StatusProduction
    Freq. (MHz)2110 ~ 2170
    Pout (W)
    Gain (dB)17.4
  • IE21165PE

    GaN on SiC Transistors

    IE21165PE

    Description

    RFHIC’s IE21165PE is a discrete GaN on SiC HEMT which operates from 2110 to 2170 MHz. The IE21165PE delivers 165 W of saturated power at 48V with a drain efficiency ...

    Frequency
    2110 ~ 2170MHz
    Output Power
    37W
    Gain
    17.5dB
    Efficiency
    72%
    StatusProduction
    Freq. (MHz)2110 ~ 2170
    Pout (W)
    Gain (dB)17.5
  • IE21110P

    GaN on SiC Transistors

    IE21110P

    Description

    RFHIC’s IE21110P is a discrete GaN on SiC HEMT which operates from 2110 to 2170 MHz. The IE21110P delivers 110 W of saturated power at 48V with a drain efficiency ...

    Frequency
    2110 ~ 2170MHz
    Output Power
    25W
    Gain
    18.4dB
    Efficiency
    74%
    StatusProduction
    Freq. (MHz)2110 ~ 2170
    Pout (W)
    Gain (dB)18.4
  • IE21085P

    GaN on SiC Transistors

    IE21085P

    Description

    RFHIC’s IE21085P is a discrete GaN on SiC HEMT which operates from 2110 to 2170 MHz. The IE21085P delivers 85 W of saturated power at 48V with a drain efficiency ...

    Frequency
    2110 ~ 2170MHz
    Output Power
    19W
    Gain
    20.7dB
    Efficiency
    75%
    StatusProduction
    Freq. (MHz)2110 ~ 2170
    Pout (W)
    Gain (dB)20.7
  • IE19195WD

    GaN on SiC Transistors

    IE19195WD

    Description

    RFHIC’s IE19195WD is a discrete GaN on SiC HEMT which operates from 1880 to 2025 MHz. The IE19195WD delivers 195 W of saturated power at 48V with a drain efficiency ...

    Frequency
    1880 ~ 2025MHz
    Output Power
    32W
    Gain
    16.9dB
    StatusProduction
    Freq. (MHz)1880 ~ 2025
    Pout (W)
    Gain (dB)16.9
  • IE18330D

    GaN on SiC Transistors

    IE18330D

    Description

    RFHIC’s IE18330D is a discrete GaN on SiC HEMT which operates from 1805 to 1880 MHz. The IE18330D delivers 330 W of saturated power at 48V with a drain efficiency ...

    Frequency
    1805 ~ 1880MHz
    Output Power
    63W
    Gain
    15.5dB
    StatusProduction
    Freq. (MHz)1805 ~ 1880
    Pout (W)
    Gain (dB)15.5
  • IE18330PG

    GaN on SiC Transistors

    IE18330PG

    Description

    RFHIC’s IE18330PG is a discrete GaN on SiC HEMT which operates from 1805 to 1880 MHz. The IE18330PG delivers 330 W of saturated power at 48V with a drain efficiency ...

    Frequency
    1805 ~ 1880MHz
    Output Power
    74W
    Gain
    15.8dB
    Efficiency
    72%
    StatusProduction
    Freq. (MHz)1805 ~ 1880
    Pout (W)
    Gain (dB)15.8
  • IE18250D

    GaN on SiC Transistors

    IE18250D

    Description

    RFHIC’s IE18250D is a discrete GaN on SiC HEMT which operates from 1805 to 1880 MHz. The IE18250D delivers 250 W of saturated power at 48V with a drain efficiency ...

    Frequency
    1805 ~ 1880MHz
    Output Power
    45W
    Gain
    16.7dB
    StatusProduction
    Freq. (MHz)1805 ~ 1880
    Pout (W)
    Gain (dB)16.7
  • IE18220PG

    GaN on SiC Transistors

    IE18220PG

    Description

    RFHIC’s IE18220PG is a discrete GaN on SiC HEMT which operates from 1805 to 1880 MHz. The IE18220PG delivers 220 W of saturated power at 48V with a drain efficiency ...

    Frequency
    1805 ~ 1880MHz
    Output Power
    50W
    Gain
    18.1dB
    Efficiency
    71%
    StatusProduction
    Freq. (MHz)1805 ~ 1880
    Pout (W)
    Gain (dB)18.1
  • IE36220W

    GaN on SiC Transistors

    IE36220W

    Description

    RFHIC’s IE36220W is a discrete GaN on SiC HEMT which operates from 3480 to 3520 MHz. The IE36220W delivers 220 W of saturated power at 48V with a drain efficiency ...

    Frequency
    3480 ~ 3520MHz
    Output Power
    50W
    Gain
    14.7dB
    Efficiency
    64%
    StatusProduction
    Freq. (MHz)3480 ~ 3520
    Gain (dB)14.7
  • IE24300P

    GaN on SiC Transistors

    IE24300P

    Description

    RFHIC’s IE24300P is a 300W GaN on SiC transistor designed ideally for industrial heating, drying, and plasma lighting applications. Operating from 2400 to 2500 MHz, the IE24300P provides a high ...

    Frequency
    2400 ~ 2500MHz
    Output Power
    300W
    Gain
    11.4dB
    Efficiency
    70%
    StatusProduction
    Freq. (MHz)2400 ~ 2500
    Pout (W)
    Gain (dB)11.4
  • IE24200P

    GaN on SiC Transistors

    IE24200P

    Description

    RFHIC’s IE24200P is a 200W GaN on SiC transistor designed ideally for industrial heating, drying, and plasma lighting applications. Operating from 2400 to 2500 MHz, the IE24200P provides a high ...

    Frequency
    2400 ~ 2500MHz
    Output Power
    200W
    Gain
    131dB
    Efficiency
    74%
    StatusProduction
    Freq. (MHz)2400 ~ 2500
    Pout (W)
    Gain (dB)131
  • IE24150P

    GaN on SiC Transistors

    IE24150P

    Description

    RFHIC’s IE24150P is a 150W GaN on SiC transistor designed ideally for industrial heating, scientific, and medical (ISM) applications. Operating from 2400 to 2500 MHz, the IE24150P provides a high ...

    Frequency
    2400 ~ 2500MHz
    Output Power
    150W
    Gain
    12.5dB
    Efficiency
    72%
    StatusProduction
    Freq. (MHz)2400 ~ 2500
    Pout (W)
    Gain (dB)12.5
  • IE24100P

    GaN on SiC Transistors

    IE24100P

    Description

    RFHIC’s IE24100P is a 100W GaN on SiC transistor fabricated with RFHIC’s GaN on SiC technology. Operating from 2400 to 2500 MHz, the IE24100P provides a high gain of 14.6dB ...

    Frequency
    2400 ~ 2500MHz
    Output Power
    100W
    Gain
    14.6dB
    Efficiency
    71%
    StatusProduction
    Freq. (MHz)2400 ~ 2500
    Pout (W)
    Gain (dB)14.6
  • IE13550D

    GaN on SiC Transistors

    IE13550D

    Description

    RFHIC’s IE13550D is a 550W GaN on SiC transistor designed ideally for particle accelerators (LINAC) and microwave energy applications. Operating from 1295 to 1305 MHz, the IE13550D provides a high ...

    Frequency
    1295 ~ 1305MHz
    Output Power
    550W
    Gain
    15dB
    Efficiency
    79%
    StatusSample available
    Freq. (MHz)1295 ~ 1305
    Pout (W)
    Gain (dB)15
  • IE09300PC

    GaN on SiC Transistors

    IE09300PC

    Description

    RFHIC’s IE09300PC is a 300W GaN on SiC transistor ideally suited for industrial heating, drying, and plasma lighting applications. Operating from 900 to 930 MHz, the IE09300PC provides a high ...

    Frequency
    900 ~ 930MHz
    Output Power
    300W
    Gain
    17.5dB
    Efficiency
    80%
    StatusProduction
    Freq. (MHz)900 ~ 930
    Pout (W)
    Gain (dB)17.5
  • IE09150PC

    GaN on SiC Transistors

    IE09150PC

    Description

    RFHIC’s IE09150PC is a 150W continuous-wave GaN on SiC transistor. Operating from 900 to 930 MHz, the IE09150PC provides a high gain of 17.6dB with an 82.5% drain efficiency at ...

    Frequency
    900 ~ 930MHz
    Output Power
    150W
    Gain
    17.6dB
    Efficiency
    82.5%
    StatusProduction
    Freq. (MHz)900 ~ 930
    Pout (W)
    Gain (dB)17.6
  • ET43014P

    GaN on SiC Transistors

    ET43014P

    Description

    RFHIC’s ET43014P is a 14W GaN on SiC drive transistor designed ideally for industrial heating/drying, medical and plasma lighting applications. Operable within DC to 6000 MHz, the ET43014P provides a ...

    Frequency
    0 ~ 6000MHz
    Output Power
    14W
    Gain
    15.5dB
    Efficiency
    64%
    StatusProduction
    Freq. (MHz)0 ~ 6000
    Pout (W)
    Gain (dB)15.5
  • ET43028P

    GaN on SiC Transistors

    ET43028P

    Description

    RFHIC’s ET43028P is a 28W GaN on SiC drive transistor designed ideally for industrial heating, drying, and plasma lighting applications. Operable within DC to 6000 MHz, the ET43028P provides a ...

    Frequency
    0 ~ 6000MHz
    Output Power
    28W
    Gain
    15.2dB
    Efficiency
    67%
    StatusProduction
    Freq. (MHz)0 ~ 6000
    Pout (W)
    Gain (dB)15.2
  • ET43055P

    GaN on SiC Transistors

    ET43055P

    Description

    RFHIC’s ET43055P is a 55W GaN on SiC drive transistor designed ideally for industrial, scientific, and medical (ISM) applications. Operable from DC to 6000 MHz, the ET43055P provides a high ...

    Frequency
    0 ~ 6000MHz
    Output Power
    55W
    Gain
    13.4dB
    Efficiency
    71%
    StatusProduction
    Freq. (MHz)0 ~ 6000
    Pout (W)
    Gain (dB)13.4
  • Category